Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same

• Application Type:

  Divisional

  Patent Number:

  6753567

  Country:

  United States

  Status:

  Filed on 12-Jan-2003, Issued on 22-Jun-2004, Patent Abandoned

  Organization:

  North Carolina State University

  SRC Filing ID:

  P0375

Inventors

• Angus Kingon (NC State)
• Jon Paul Maria (NC State)