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Thrust/Theme
LMD – Logic and Memory Devices
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1 through 8 of
8 similar documents, best matches first. |
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- 1:
IRP Advisory Board Meeting
- LMD Research Program e-Kickoff April 11, 2023, virtual Kashyap Yellai, Science Director Tameka Bell & Dilcia Paguada, Research Program Coordinators https://www.src.org/calendar/...
URL: https://www.src.org/...37/2023-ekickoff-lmd-introduction.pdf
Modified: 2023-04-12 - 481KB Find Similar Documents
- 2:
PowerPoint Presentation
- Logic and Memory Devices Research Program Annual Review Oct 25 - Oct 26, 2022 Samsung Electronics Corporation, San Jose, CA Kashyap Yellai, Science Director Tameka Bell, Research ...
URL: https://www.src.org/...troslides/lmd_2022_ar_introslides.pdf
Modified: 2022-10-28 - 669KB Find Similar Documents
- 3:
Semiconductor Research Corporation - SRC
- GRC GRC Global Research Collaboration Our motivation is to fund the most relevant and critical research for international companies, so we go where the best university talent ...
URL: https://www.src.org/program/grc/
Modified: 2023-10-10 - 33KB Find Similar Documents
- 4:
Semiconductors Impact over the past 50 years
- Logic and Memory Devices Program Annual Review Meeting Industry Talk: An Update on Federal Funding of Semiconductor Research October 27, 2021 Dave Henshall Director of Business ...
URL: https://www.src.org/...eview_gov_funding_update_henshall.pdf
Modified: 2021-10-27 - 1.7MB Find Similar Documents
- 5:
Multi-Domain Formations in MFIM(S) stacks and Ferroelectric-FETs...
- Multi-Domain Formations in MFIM(S) stacks and Ferroelectric-FETs based on HZO and their Impact on the Device Characteristics (Option 2 of 2) Date: Wednesday, May 19, 2021, 8 p.m.-9 ...
URL: https://www.src.org/calendar/e007385/
Modified: 2021-05-20 - 30KB Find Similar Documents
- 6:
Perpendicular Magnetic Tunnel Junctions with Multi-Interface...
- Perpendicular Magnetic Tunnel Junctions with Multi-Interface Free Layer doe Magnetoelcetric Devices Application Type: Utility Country: United States Status: Filed on 9-Feb-2022, ...
URL: https://www.src.org/library/patent/p2013/
Modified: 2022-02-09 - 22KB Find Similar Documents
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Deterministic Seeding of Switching Filament Oxide-Based Memristive...
- Deterministic Seeding of Switching Filament Oxide-Based Memristive Devices Application Type: Utility Patent Number: 9997700 Country: United States Status: Filed on 1-May-2014, ...
URL: https://www.src.org/library/patent/p1483/
Modified: 2018-06-12 - 22KB Find Similar Documents
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III-V Vertical Nanowire MOSFETs (Option 2 of 2) (Event E006627...
- III-V Vertical Nanowire MOSFETs (Option 2 of 2) Date: Wednesday, Oct. 10, 2018, 8 p.m.-9 p.m. ET Location: via WebEx, Durham, NC, United States Type: e-Workshop Event ID: E006627 ...
URL: https://www.src.org/calendar/e006627/
Modified: 2018-09-25 - 29KB Find Similar Documents
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8 similar documents, best matches first. |
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