[x]
Thrust/Theme
Advanced Devices & Technologies
[x]
GRC Science Area
MIC – Microstructure Sciences
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| 1 through 11 of
11 similar documents, best matches first. |
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- 1:
Semiconductor Research Corporation - SRC
- GRC GRC Global Research Collaboration Our motivation is to fund the most relevant and critical research for international companies, so we go where the best university talent ...
URL: https://www.src.org/program/grc/
Modified: 2023-10-10 - 33KB
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- 2:
Cyclic Thermal Anneal for Dislocation Reduction (Patent P0334...
- Cyclic Thermal Anneal for Dislocation Reduction Application Type: Foreign National Patent Number: 139204 Country: Taiwan Status: Filed on 26-Jun-2000, Issued on 17-Dec-2001 ...
URL: https://www.src.org/library/patent/p0334/
Modified: 2001-12-17 - 23KB
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- 3:
Oxidation of silicon on germanium (Patent P0250) - SRC
- Oxidation of silicon on germanium Application Type: Utility Patent Number: 6352942 Country: United States Status: Filed on 25-Jun-1999, Issued on 5-Mar-2002, Patent Abandoned ...
URL: https://www.src.org/library/patent/p0250/
Modified: 2002-03-05 - 23KB
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- 4:
Cyclic Anneal for Dislocation Reduction (Patent P0255) - SRC
- Cyclic Anneal for Dislocation Reduction Application Type: Utility Patent Number: 6635110 Country: United States Status: Filed on 23-Jun-2000, Issued on 21-Oct-2003 Organization: ...
URL: https://www.src.org/library/patent/p0255/
Modified: 2003-10-21 - 23KB
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- 5:
Cyclic Thermal Anneal for Dislocation Reduction (Patent P0335...
- Cyclic Thermal Anneal for Dislocation Reduction Application Type: European Patent Office Patent Number: 1192646 Status: Filed on 23-Jun-2000, Issued on 13-Aug-2008 Organization: ...
URL: https://www.src.org/library/patent/p0335/
Modified: 2008-08-13 - 23KB
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- 6:
Oxidation of silicon on germanium (Patent P0330) - SRC
- Oxidation of silicon on germanium Application Type: Foreign National Patent Number: 154359 Country: Taiwan Status: Filed on 26-Jun-2000, Issued on 15-Aug-2002, Patent Abandoned ...
URL: https://www.src.org/library/patent/p0330/
Modified: 2002-08-15 - 23KB
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- 7:
Methods of Forming Features of Integrated Circuits Using Modified...
- Methods of Forming Features of Integrated Circuits Using Modified Buried Layers and Integrated Circuits Having Features so Formed Application Type: Utility Patent Number: 6346446 ...
URL: https://www.src.org/library/patent/p0190/
Modified: 2002-02-12 - 22KB
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- 8:
Bipolar Transistor Having Base Region With Coupled Delta Layers...
- Bipolar Transistor Having Base Region With Coupled Delta Layers Application Type: Continuation (in part) Patent Number: 5965931 Country: United States Status: Filed on 15-Sep-1994, ...
URL: https://www.src.org/library/patent/p0003/
Modified: 1999-10-12 - 35KB
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- 9:
Method of Fabricating Quantum Bridges by Selective Etching of...
- Method of Fabricating Quantum Bridges by Selective Etching of Superlattice Structures Application Type: Utility Patent Number: 5630905 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0008/
Modified: 1997-05-20 - 35KB
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- 10:
Semiconductor-On-Insulator Electronic Devices Having Trench Isolated...
- Semiconductor-On-Insulator Electronic Devices Having Trench Isolated Monocrystalline Active Regions Application Type: Utility Patent Number: 5481126 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0027/
Modified: 1996-01-02 - 22KB
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- 11:
Method of Forming Semiconductor-On-Insulator Electronic Devices...
- Method of Forming Semiconductor-On-Insulator Electronic Devices by Growing Monocrystalline Semiconducting Regions from Trench Sidewalls Application Type: Utility Patent Number: ...
URL: https://www.src.org/library/patent/p0025/
Modified: 1996-02-27 - 22KB
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