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Thrust/Theme
BEP – Back End Processes
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- 1:
Synthesis and Characterization of First Row Transition Metal...
- Synthesis and Characterization of First Row Transition Metal Complexes Containing a-Imino Alkoxide as Precursors for Deposition of Metal Films Application Type: Utility Patent ...
URL: https://www.src.org/library/patent/p1373/
Modified: 2017-09-12 - 22KB
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- 2:
Synthesis and Characterization of First Row Transition Metal...
- Synthesis and Characterization of First Row Transition Metal Complexes Containing Alpha-Keto Hydrazonate Ligands as Potential Precursors for Use in Metal Film Deposition ...
URL: https://www.src.org/library/patent/p1356/
Modified: 2015-12-09 - 22KB
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- 3:
High Gain Integrated Antenna and Devices Therefrom (Patent P0392...
- High Gain Integrated Antenna and Devices Therefrom Application Type: Utility Patent Number: 6842144 Country: United States Status: Filed on 10-Jun-2003, Issued on 11-Jan-2005, ...
URL: https://www.src.org/library/patent/p0392/
Modified: 2005-01-11 - 22KB
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- 4:
Method of Forming Boron Carbo-Nitride Layers for Integrated Circuit...
- Method of Forming Boron Carbo-Nitride Layers for Integrated Circuit Devices Application Type: Utility Patent Number: 7144803 Country: United States Status: Filed on 16-Apr-2004, ...
URL: https://www.src.org/library/patent/p0451/
Modified: 2006-12-05 - 22KB
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- 5:
Growth of Inorganic Thin Films using Self-Assembled Monolayers...
- Growth of Inorganic Thin Films using Self-Assembled Monolayers as Nucleation Sites Application Type: Utility Patent Number: 7829150 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p1139/
Modified: 2010-11-09 - 22KB
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- 6:
Wafer Fabrication Monitoring/Control System and Method (Patent...
- Wafer Fabrication Monitoring/Control System and Method Application Type: Utility Patent Number: 9366601 Country: United States Status: Filed on 15-Mar-2012, Issued on 14-Jun-2016 ...
URL: https://www.src.org/library/patent/p1332/
Modified: 2016-06-14 - 23KB
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- 7:
Conductors Created by Metal Deposition Using Selective Passivation...
- Conductors Created by Metal Deposition Using Selective Passivation Layer and Related Methods Application Type: Utility Patent Number: 7534967 Country: United States Status: Filed ...
URL: https://www.src.org/library/patent/p0447/
Modified: 2009-05-19 - 23KB
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- 8:
Low Dielectric Constant (Low-K) Dielectric and Method of Forming...
- Low Dielectric Constant (Low-K) Dielectric and Method of Forming The Same Application Type: Utility Patent Number: 10090150 Country: United States Status: Filed on 6-Sep-2017, ...
URL: https://www.src.org/library/patent/p1731/
Modified: 2018-10-02 - 24KB
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- 9:
Semiconductor Research Corporation - SRC
- GRC GRC Global Research Collaboration Our motivation is to fund the most relevant and critical research for international companies, so we go where the best university talent ...
URL: https://www.src.org/program/grc/
Modified: 2023-10-10 - 33KB
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