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ASCENT

Content Type
Patent Filings 9
Events 2
Other 1

SRC Program
JUMP 12

Year
2021 1
2019 1

Thrust/Theme
ASCENT-T1 – Vertical CMOS 7
ASCENT-T2 – Beyond CMOS 5
ASCENT-T3 – Heterogeneous Integr... 3
ASCENT-T4 – Merged Logic Memory ... 3
ADA-T1 – Deft Development 1
ADA-T2 – Algorithm-driven Archit... 1
ADA-T3 – Technology-driven Syste... 1
CBRIC-T1 – Neuro-inspired Algori... 1
CBRIC-T2 – Neuromorphic Fabrics 1
CBRIC-T3 – Distributed Intellige... 1
CBRIC-T4 – Application Drivers 1
CONIX-T1 – ARENA Integrator 1
CONIX-T2 – Hardware/Software Pla... 1
CONIX-T3 – Security 1
CONIX-T4 – Machine Learning 1
CONIX-T5 – Communication Positio... 1
CONIX-T6 – Programming and Resou... 1
CRISP-T1 – Hardware Support for ... 1
CRISP-T2 – System Support for Ma... 1
CRISP-T3 – Scaling Applications ... 1
ComSenTer-T1 – Systems and Algor... 1
ComSenTer-T2 – mm-wave/THz ICs a... 1
ComSenTer-T3 – Application-speci... 1
ComSenTer-T4 – Center-wide Demon... 1
JUMP-URI – JUMP Undergraduate Re... 1

1 through 12 of 12 similar documents, best matches first.   
1: Semiconductor Research Corporation - SRC
JUMP JUMP Joint University Microelectronics Program Supporting long-term research focused on high performance, energy efficient microelectronics for end-to-end sensing and ...
URL: https://www.src.org/program/jump/
Modified: 2023-10-10 - 29KB
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2: Micron Scale Tin Oxide-Based Semiconductor Devices (Patent P1886...
Micron Scale Tin Oxide-Based Semiconductor Devices Application Type: Utility Patent Number: 11217700 Country: United States Status: Filed on 6-Dec-2019, Published by Patent Office ...
URL: https://www.src.org/library/patent/p1886/
Modified: 2022-01-04 - 28KB
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3: Micron Scale Tin Oxide-Based Semiconductor Devices (Patent P2041...
Micron Scale Tin Oxide-Based Semiconductor Devices Application Type: Continuation Country: United States Status: Filed on 4-Jan-2022, Published by Patent Office Organization: ...
URL: https://www.src.org/library/patent/p2041/
Modified: 2022-01-04 - 28KB
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4: Pattering Electronic Devices Reactive-Ion Etching of Tin Oxides...
Pattering Electronic Devices Reactive-Ion Etching of Tin Oxides Application Type: Continuation Country: United States Status: Filed on 9-Dec-2020, Published by Patent Office ...
URL: https://www.src.org/library/patent/p1946/
Modified: 2020-12-09 - 29KB
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5: Patterning Electronic Devices using Reactive-Ion Etching of Tin...
Patterning Electronic Devices using Reactive-Ion Etching of Tin Oxides Application Type: Utility Patent Number: 10868191 Country: United States Status: Filed on 6-Dec-2019, ...
URL: https://www.src.org/library/patent/p1879/
Modified: 2020-12-15 - 28KB
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6: Electric Field Switchable Magnetic Devices (Patent P2023) - SRC
Electric Field Switchable Magnetic Devices Application Type: Continuation Country: United States Status: Filed on 14-Oct-2021, Published by Patent Office Organization: University ...
URL: https://www.src.org/library/patent/p2023/
Modified: 2021-10-14 - 24KB
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7: Non-Volatile Multi-Level Cell Memory using a Ferroelectric Superlattic...
Non-Volatile Multi-Level Cell Memory using a Ferroelectric Superlattice and Related Systems Application Type: Utility Patent Number: 11532355 Country: United States Status: Filed ...
URL: https://www.src.org/library/patent/p1942/
Modified: 2022-12-20 - 23KB
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8: Hybrid Charge Trap Transistor-MRAM Memory Devices (Patent P1951...
Hybrid Charge Trap Transistor-MRAM Memory Devices Application Type: Utility Patent Number: 11328757 Country: United States Status: Filed on 23-Oct-2020, Issued on 10-May-2022 ...
URL: https://www.src.org/library/patent/p1951/
Modified: 2022-05-10 - 25KB
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9: Electric-Field Switchable Magnetic Devices (Patent P1856) - SRC
Electric-Field Switchable Magnetic Devices Application Type: Utility Patent Number: 11183227 Country: United States Status: Filed on 29-Apr-2020, Issued on 23-Nov-2021 ...
URL: https://www.src.org/library/patent/p1856/
Modified: 2021-11-23 - 24KB
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10: Bio - Arijit Raychowdhury - SRC
Bio: Arijit Raychowdhury Arijit Raychowdhury Arijit Raychowdhury is an Associate Professor in the School of Electrical and Computer Engineering at the Georgia Institute of ...
URL: https://www.src.org/...ndar/e006798/arijit-raychowdhury-bio/
Modified: 2019-05-07 - 20KB
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11: Ferroelectric Circuit for Non-Volatile High-Performance Memory...
Ferroelectric Circuit for Non-Volatile High-Performance Memory Application Type: Utility Country: United States Status: Filed on 8-Dec-2022, Published by Patent Office ...
URL: https://www.src.org/library/patent/p2054/
Modified: 2022-12-08 - 23KB
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12: ASCENT Annual Review - Day 2 Talks (August 11th) - SRC
ASCENT Annual Review Pre-Recorded Presentations - Day 2 (August 11th) Sayeef Salahuddin Jeffrey Bokor Ramamoorthy Ramesh Dan Ralph Ian Young / Intel - Industry Speaker Madhavan ...
URL: https://www.src.org/calendar/e007136/august11/
Modified: 2021-08-11 - 25KB
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1 through 12 of 12 similar documents, best matches first.