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NEWLIMITS

Content Type
Patent Filings 5
Other 1

SRC Program
nCORE 6

Thrust/Theme
NEWLIMITS-T2 – 2D Materials Devi... 3
NEWLIMITS-T1 – Novel Computing a... 2
NEWLIMITS-T3 – Advanced Manufact... 2
NEWLIMITS-T4 – Characterization ... 2
AMML-T1 – Antiferromagnetic Magn... 1
CAPSL-T1 – Materials Development... 1
CAPSL-T2 – P-transistors for PSL... 1
CAPSL-T3 – Device Models and Tut... 1
CAPSL-T4 – Architectures and Sys... 1
DEEP3M-T1 – Devices 1
DEEP3M-T2 – Circuits 1
DEEP3M-T3 – Materials 1
DEEP3M-T4 – Architectures 1
E2CDA2 – E2CDA 2.0 1
IMPACT-T1 – Materials for Scaled... 1
IMPACT-T2 – Materials for Storag... 1
NEWLIMITS-T5 – Simulations and M... 1
SMART-T1 – Spin-orbit Torque Mat... 1
SMART-T2 – Ultra-Low Loss Spin W... 1
SMART-T3 – Magneto-ionic Materia... 1

1 through 6 of 6 similar documents, best matches first.   
1: Semiconductor Research Corporation - SRC
nCORE nCORE Nanoelectronic Computing Research Explore fundamental materials, devices, and interconnect solutions to enable future computing and storage paradigms beyond ...
URL: https://www.src.org/program/ncore/
Modified: 2023-10-10 - 30KB
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2: Valley Spin Hall Effect Based Non-Volatile Memory (Patent P1912...
Valley Spin Hall Effect Based Non-Volatile Memory Application Type: Utility Patent Number: 11250896 Country: United States Status: Filed on 24-Dec-2020, Issued on 15-Feb-2022 ...
URL: https://www.src.org/library/patent/p1912/
Modified: 2022-02-15 - 25KB
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3: Cross-Coupled Gated Tunnel Diode (XTD) Device with Increased...
Cross-Coupled Gated Tunnel Diode (XTD) Device with Increased Peak-to-Valley Current Ratio (PVCR) Application Type: Utility Country: United States Status: Filed on 9-Mar-2022, ...
URL: https://www.src.org/library/patent/p2024/
Modified: 2022-03-09 - 23KB
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4: Converting Ta- and Ti-Based Cu Diffusion Barriers into their...
Converting Ta- and Ti-Based Cu Diffusion Barriers into their sp2 Bond Based 2D Materials to Enhance Diffusion Barrier Properties with Atomically-thin Thickness Application Type: ...
URL: https://www.src.org/library/patent/p1824/
Modified: 2022-03-29 - 22KB
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5: Advanced Precursors for Selective Atomic Layer Deposition using...
Advanced Precursors for Selective Atomic Layer Deposition using Self-Assembled Monolayers Application Type: Utility Country: United States Status: Filed on 1-Nov-2021, Published by ...
URL: https://www.src.org/library/patent/p1974/
Modified: 2021-11-01 - 24KB
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6: Multiferroic Heterostructures (Patent P1872) - SRC
Multiferroic Heterostructures Application Type: Utility Patent Number: 11276728 Country: United States Status: Filed on 7-Feb-2020, Issued on 15-Mar-2022 Organization: University ...
URL: https://www.src.org/library/patent/p1872/
Modified: 2022-03-15 - 22KB
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1 through 6 of 6 similar documents, best matches first.