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| 1 through 27 of
27 similar documents, best matches first. |
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- 1:
SWAN Center Onsite Review (Event E003786) - SRC
- SWAN Center Onsite Review Date: Wednesday, Sept. 15, 2010, 8 a.m. - Thursday, Sept. 16, 2010, noon CT Location: Lil Tex Room, J. Neils Thompson Commons at J.J. Pickle Research ...
URL: https://www.src.org/calendar/e003786/
Modified: 2011-03-16 - 55KB
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- 2:
SWAN Executive Committee Meeting (Event E005967) - SRC
- SWAN Executive Committee Meeting Date: Monday, Feb. 1, 2016, 1 p.m.-2 p.m. CT Location: via web conference, Austin, TX, United States Event ID: E005967 Technical briefing of the ...
URL: https://www.src.org/calendar/e005967/
Modified: 2016-01-12 - 34KB
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- 3:
SWAN Executive Committee Meeting (Event E005968) - SRC
- SWAN Executive Committee Meeting Date: Monday, April 4, 2016, 1 p.m.-2 p.m. CT Location: via web conference, Austin, TX, United States Event ID: E005968 Technical briefing of the ...
URL: https://www.src.org/calendar/e005968/
Modified: 2016-01-12 - 34KB
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- 4:
SWAN Executive Committee Meeting (Event E005969) - SRC
- SWAN Executive Committee Meeting Date: Monday, June 6, 2016, 1 p.m.-2 p.m. CT Location: via web conference, Austin, TX, United States Event ID: E005969 Technical briefing of the ...
URL: https://www.src.org/calendar/e005969/
Modified: 2016-01-12 - 34KB
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- 5:
SWAN Executive Committee Meeting (Event E005970) - SRC
- SWAN Executive Committee Meeting Date: Monday, Aug. 1, 2016, 1 p.m.-2 p.m. CT Location: via web conference, Austin, TX, United States Event ID: E005970 Technical briefing of the ...
URL: https://www.src.org/calendar/e005970/
Modified: 2016-01-12 - 34KB
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- 6:
SWAN Executive Committee Meeting (Event E005971) - SRC
- SWAN Executive Committee Meeting Date: Monday, Oct. 3, 2016, 1 p.m.-2 p.m. CT Location: via web conference, Austin, TX, United States Event ID: E005971 Technical briefing of the ...
URL: https://www.src.org/calendar/e005971/
Modified: 2016-09-08 - 34KB
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- 7:
NRI Annual Review (Event E003789) - SRC
- NRI Annual Review Date: Tuesday, Oct. 26, 2010, 8 a.m. - Thursday, Oct. 28, 2010, noon ET Location: Wyndham Gaithersburg, Gaithersburg, MD, United States Event ID: E003789 Year-end ...
URL: https://www.src.org/calendar/e003789/
Modified: 2011-04-28 - 103KB
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- 8:
Benchmarking e-Workshop - Part I (Event E006264) - SRC
- Benchmarking e-Workshop - Part I Date: Thursday, April 6, 2017, 3 p.m.-5 p.m. ET Location: via Web Conferencing, Durham, NC, United States Type: e-Workshop Event ID: E006264 ...
URL: https://www.src.org/calendar/e006264/
Modified: 2017-04-10 - 41KB
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- 9:
NRI Architectures and Benchmarking Workshop (Event E004818) ...
- NRI Architectures and Benchmarking Workshop Date: Tuesday, Aug. 14, 2012, 8 a.m.-5 p.m. ET Location: University of Notre Dame, McKenna Hall, Notre Dame, IN, United States Event ID: ...
URL: https://www.src.org/calendar/e004818/
Modified: 2013-02-14 - 72KB
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- 10:
Benchmarking e-Workshop - Part II (Event E006265) - SRC
- Benchmarking e-Workshop - Part II Date: Thursday, April 13, 2017, 1 p.m.-3 p.m. ET Location: via Web Conferencing, Durham, NC, United States Type: e-Workshop Event ID: E006265 ...
URL: https://www.src.org/calendar/e006265/
Modified: 2017-04-19 - 46KB
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- 11:
Method for Fabricating Magnetic Solid State Devices (Patent P1608...
- Method for Fabricating Magnetic Solid State Devices Application Type: Utility Patent Number: 10121962 Country: United States Status: Filed on 8-May-2017, Issued on 6-Nov-2018 ...
URL: https://www.src.org/library/patent/p1608/
Modified: 2018-11-06 - 22KB
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- 12:
Memory Device Based on Gate Controlled Ferromagnetism and Spin...
- Memory Device Based on Gate Controlled Ferromagnetism and Spin-Polarized Current Injection Application Type: Utility Patent Number: 9741416 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p1609/
Modified: 2017-08-22 - 22KB
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- 13:
Topological Insulator-Based Field-Effect Transistor (Patent P1271...
- Topological Insulator-Based Field-Effect Transistor Application Type: Utility Patent Number: 8629427 Country: United States Status: Filed on 29-Apr-2011, Issued on 14-Jan-2014, ...
URL: https://www.src.org/library/patent/p1271/
Modified: 2014-01-14 - 22KB
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- 14:
Transistor That Employs Collective Magnetic Effects Thereby Providing...
- Transistor That Employs Collective Magnetic Effects Thereby Providing Improved Energy Efficiency Application Type: Utility Patent Number: 9825218 Country: United States Status: ...
URL: https://www.src.org/library/patent/p1535/
Modified: 2017-11-21 - 22KB
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- 15:
TECHCON 2013 (Event E004683) - SRC
- TECHCON 2013 Date: Monday, Sept. 9, 2013, 8 a.m. - Tuesday, Sept. 10, 2013, 10 p.m. CT Location: Renaissance Austin Hotel, Austin, TX, United States Event ID: E004683 E004683 image ...
URL: https://www.src.org/calendar/e004683/
Modified: 2014-03-10 - 136KB
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- 16:
Semiconductor Research Corporation - SRC
- NRI NRI Nanoelectronics Research Initiative An Chen, NRI Executive Director Future generations of electronics will be based on new devices and circuit architectures, operating on ...
URL: https://www.src.org/program/nri/
Modified: 2023-10-10 - 31KB
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- 17:
Synthesizing Graphene from Metal-Carbon Solutions Using Ion Implantati...
- Synthesizing Graphene from Metal-Carbon Solutions Using Ion Implantation Application Type: Divisional Patent Number: 8461028 Country: United States Status: Filed on 8-Oct-2012, ...
URL: https://www.src.org/library/patent/p1374/
Modified: 2013-06-11 - 22KB
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- 18:
Synthesizing Graphene from Metal-Carbon Solutions using Ion Implantati...
- Synthesizing Graphene from Metal-Carbon Solutions using Ion Implantation Application Type: Utility Patent Number: 8309438 Country: United States Status: Filed on 16-Feb-2010, ...
URL: https://www.src.org/library/patent/p1192/
Modified: 2012-11-13 - 23KB
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- 19:
Incorporating Gate Control over a Resonant Tunneling Structure...
- Incorporating Gate Control over a Resonant Tunneling Structure in CMOS to Reduce off-State Current Leakage, Supply Voltage and Power Consumption Application Type: Utility Patent ...
URL: https://www.src.org/library/patent/p1098/
Modified: 2011-08-30 - 23KB
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- 20:
Energy-Efficient Technologies and Architectures for Next-Generation...
- Energy-Efficient Technologies and Architectures for Next-Generation Optical Interconnection Networks Date: Tuesday, Dec. 5, 2017, 4 p.m.-5:30 p.m. ET Location: via web conference, ...
URL: https://www.src.org/calendar/e006255/
Modified: 2017-12-06 - 32KB
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- 21:
 2010 NRI Annual Review Agenda
- 10/22/2010 2010 NRI Annual Review October 26, 27 & 28, 2010 AGENDA Hotel, Meetings & Events will be held at the Wyndham Garden Hotel Gaithersburg, 805 Russell Avenue, Gaithersburg, ...
URL: https://www.src.org/...ar/e003789/2010 nri review agenda.pdf
Modified: 2010-10-22 - 76KB
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- 22:
Graphene Synthesis by Chemical Vapor Deposition (Patent P1198...
- Graphene Synthesis by Chemical Vapor Deposition Application Type: Utility Patent Number: 8470400 Country: United States Status: Filed on 5-May-2010, Issued on 25-Jun-2013 ...
URL: https://www.src.org/library/patent/p1198/
Modified: 2013-06-25 - 21KB
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- 23:
2008 NRI Annual Review Agenda
- 8/22/2012 2012 NRI Annual Review November 6, 7 & 8, 2012 AGENDA Hotel, Meetings & Events will be held at the Holiday Inn, 2 Montgomery Village Ave., Gaithersburg, MD 20879 Tuesday, ...
URL: https://www.src.org/calendar/e004543/2012-nri-agenda.pdf
Modified: 2012-08-22 - 61KB
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- 24:
Methods of Forming Graphene Single Crystal Domains on a Low Nucleation...
- Methods of Forming Graphene Single Crystal Domains on a Low Nucleation Site Density Substrate Application Type: Utility Patent Number: 10072355 Country: United States Status: Filed ...
URL: https://www.src.org/library/patent/p1436/
Modified: 2018-09-11 - 21KB
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- 25:
Establishing a Uniformly Thin Dielectric Layer on Graphene in...
- Establishing a Uniformly Thin Dielectric Layer on Graphene in a Semiconductor Device without Affecting the Properties of Graphene Application Type: Utility Patent Number: 8198707 ...
URL: https://www.src.org/library/patent/p1099/
Modified: 2012-06-12 - 21KB
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- 26:
Bi-Layer Pseudo-Spin-Field-Effect Transistor (Patent P1174) ...
- Bi-Layer Pseudo-Spin-Field-Effect Transistor Application Type: Utility Patent Number: 8188460 Country: United States Status: Filed on 24-Nov-2009, Issued on 29-May-2012, Patent ...
URL: https://www.src.org/library/patent/p1174/
Modified: 2012-05-29 - 23KB
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- 27:
Bi-layer Pseudo-Spin Field-Effect Transistor (Patent P1347) ...
- Bi-layer Pseudo-Spin Field-Effect Transistor Application Type: Divisional Patent Number: 8263967 Country: United States Status: Filed on 1-May-2012, Issued on 11-Sep-2012, Patent ...
URL: https://www.src.org/library/patent/p1347/
Modified: 2012-09-11 - 23KB
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