Questions?
[x] SRC Program
JUMP

Content Type
Patent Filings 6
Other 2
Events 1

Year
2019 1
2013 1

Center
ASCENT 7
CBRIC 2
ComSenTer 2
ADA 1
CONIX 1
CRISP 1
JUMP-URI 1

Thrust/Theme
ASCENT-T1 – Vertical CMOS 5
ASCENT-T2 – Beyond CMOS 2
CBRIC-T1 – Neuro-inspired Algori... 2
ComSenTer-T3 – Application-speci... 2
ADA-T1 – Deft Development 1
ADA-T2 – Algorithm-driven Archit... 1
ADA-T3 – Technology-driven Syste... 1
ASCENT-T3 – Heterogeneous Integr... 1
ASCENT-T4 – Merged Logic Memory ... 1
CBRIC-T2 – Neuromorphic Fabrics 1
CBRIC-T3 – Distributed Intellige... 1
CBRIC-T4 – Application Drivers 1
CONIX-T1 – ARENA Integrator 1
CONIX-T2 – Hardware/Software Pla... 1
CONIX-T3 – Security 1
CONIX-T4 – Machine Learning 1
CONIX-T5 – Communication Positio... 1
CONIX-T6 – Programming and Resou... 1
CRISP-T1 – Hardware Support for ... 1
CRISP-T2 – System Support for Ma... 1
CRISP-T3 – Scaling Applications ... 1
ComSenTer-T1 – Systems and Algor... 1
ComSenTer-T2 – mm-wave/THz ICs a... 1
ComSenTer-T4 – Center-wide Demon... 1
JUMP-URI – JUMP Undergraduate Re... 1

1 through 9 of 9 similar documents, best matches first.   
1: Hybrid Charge Trap Transistor-MRAM Memory Devices (Patent P1951...
Hybrid Charge Trap Transistor-MRAM Memory Devices Application Type: Utility Patent Number: 11328757 Country: United States Status: Filed on 23-Oct-2020, Issued on 10-May-2022 ...
URL: https://www.src.org/library/patent/p1951/
Modified: 2022-05-10 - 25KB
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2: Micron Scale Tin Oxide-Based Semiconductor Devices (Patent P1886...
Micron Scale Tin Oxide-Based Semiconductor Devices Application Type: Utility Patent Number: 11217700 Country: United States Status: Filed on 6-Dec-2019, Published by Patent Office ...
URL: https://www.src.org/library/patent/p1886/
Modified: 2022-01-04 - 28KB
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3: Micron Scale Tin Oxide-Based Semiconductor Devices (Patent P2041...
Micron Scale Tin Oxide-Based Semiconductor Devices Application Type: Continuation Country: United States Status: Filed on 4-Jan-2022, Published by Patent Office Organization: ...
URL: https://www.src.org/library/patent/p2041/
Modified: 2022-01-04 - 28KB
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4: Pattering Electronic Devices Reactive-Ion Etching of Tin Oxides...
Pattering Electronic Devices Reactive-Ion Etching of Tin Oxides Application Type: Continuation Country: United States Status: Filed on 9-Dec-2020, Published by Patent Office ...
URL: https://www.src.org/library/patent/p1946/
Modified: 2020-12-09 - 29KB
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5: Patterning Electronic Devices using Reactive-Ion Etching of Tin...
Patterning Electronic Devices using Reactive-Ion Etching of Tin Oxides Application Type: Utility Patent Number: 10868191 Country: United States Status: Filed on 6-Dec-2019, ...
URL: https://www.src.org/library/patent/p1879/
Modified: 2020-12-15 - 28KB
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6: JUMP Mission - SRC
JUMP Mission The mission of JUMP is to look beyond today's technology horizon and lay the scientific groundwork that extends the viability of Moore's Law economics through 2040. ...
URL: https://www.src.org/program/jump/about/mission/
Modified: 2013-01-15 - 26KB
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7: Bio - Kaushik Roy - SRC
Bio: Kaushik Roy Kaushik Roy Kaushik Roy received B.Tech. degree in electronics and electrical communications engineering from the Indian Institute of Technology, Kharagpur, India, ...
URL: https://www.src.org/calendar/e006797/kaushik-roy-bio/
Modified: 2019-05-07 - 20KB
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8: Semiconductor Research Corporation - SRC
JUMP JUMP Joint University Microelectronics Program Supporting long-term research focused on high performance, energy efficient microelectronics for end-to-end sensing and ...
URL: https://www.src.org/program/jump/
Modified: 2023-10-10 - 29KB
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9: RF High-Electron-Mobiilty Transistors Including Group III-N Stress...
RF High-Electron-Mobiilty Transistors Including Group III-N Stress Neutral Barrier Layers with High Breakdown Voltages Application Type: Utility Patent Number: 11710785 Country: ...
URL: https://www.src.org/library/patent/p1864/
Modified: 2023-07-23 - 23KB
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1 through 9 of 9 similar documents, best matches first.