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NEWLIMITS

Content Type
Patent Filings 5
Events 1
Other 1

SRC Program
nCORE 7

Year
2020 1

Thrust/Theme
NEWLIMITS-T2 – 2D Materials Devi... 4
NEWLIMITS-T1 – Novel Computing a... 3
NEWLIMITS-T3 – Advanced Manufact... 3
NEWLIMITS-T4 – Characterization ... 3
NEWLIMITS-T5 – Simulations and M... 2
AMML-T1 – Antiferromagnetic Magn... 1
CAPSL-T1 – Materials Development... 1
CAPSL-T2 – P-transistors for PSL... 1
CAPSL-T3 – Device Models and Tut... 1
CAPSL-T4 – Architectures and Sys... 1
DEEP3M-T1 – Devices 1
DEEP3M-T2 – Circuits 1
DEEP3M-T3 – Materials 1
DEEP3M-T4 – Architectures 1
E2CDA2 – E2CDA 2.0 1
IMPACT-T1 – Materials for Scaled... 1
IMPACT-T2 – Materials for Storag... 1
SMART-T1 – Spin-orbit Torque Mat... 1
SMART-T2 – Ultra-Low Loss Spin W... 1
SMART-T3 – Magneto-ionic Materia... 1

1 through 7 of 7 similar documents, best matches first.   
1: Semiconductor Research Corporation - SRC
nCORE nCORE Nanoelectronic Computing Research Explore fundamental materials, devices, and interconnect solutions to enable future computing and storage paradigms beyond ...
URL: https://www.src.org/program/ncore/
Modified: 2023-10-10 - 30KB
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2: Valley Spin Hall Effect Based Non-Volatile Memory (Patent P1912...
Valley Spin Hall Effect Based Non-Volatile Memory Application Type: Utility Patent Number: 11250896 Country: United States Status: Filed on 24-Dec-2020, Issued on 15-Feb-2022 ...
URL: https://www.src.org/library/patent/p1912/
Modified: 2022-02-15 - 25KB
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3: Advanced Precursors for Selective Atomic Layer Deposition using...
Advanced Precursors for Selective Atomic Layer Deposition using Self-Assembled Monolayers Application Type: Utility Country: United States Status: Filed on 1-Nov-2021, Published by ...
URL: https://www.src.org/library/patent/p1974/
Modified: 2021-11-01 - 24KB
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4: Multiferroic Heterostructures (Patent P1872) - SRC
Multiferroic Heterostructures Application Type: Utility Patent Number: 11276728 Country: United States Status: Filed on 7-Feb-2020, Issued on 15-Mar-2022 Organization: University ...
URL: https://www.src.org/library/patent/p1872/
Modified: 2022-03-15 - 22KB
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5: Cross-Coupled Gated Tunnel Diode (XTD) Device with Increased...
Cross-Coupled Gated Tunnel Diode (XTD) Device with Increased Peak-to-Valley Current Ratio (PVCR) Application Type: Utility Country: United States Status: Filed on 9-Mar-2022, ...
URL: https://www.src.org/library/patent/p2024/
Modified: 2022-03-09 - 23KB
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6: Converting Ta- and Ti-Based Cu Diffusion Barriers into their...
Converting Ta- and Ti-Based Cu Diffusion Barriers into their sp2 Bond Based 2D Materials to Enhance Diffusion Barrier Properties with Atomically-thin Thickness Application Type: ...
URL: https://www.src.org/library/patent/p1824/
Modified: 2022-03-29 - 22KB
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7: NEWLIMITS Annual Review - Device Session Student Poster Presentations...
NEWLIMITS Center Review Student Posters We're excited to share the virtual student poster sessions with you. Please scroll below to browse videos of students speaking to their ...
URL: https://www.src.org/calendar/e007031/ncore_session_1/
Modified: 2020-07-06 - 23KB
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1 through 7 of 7 similar documents, best matches first.