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1 through 8 of 8 similar documents, best matches first.

1: Semiconductor Research Corporation - SRC: GRC GRC Global Research Collaboration Our motivation is to fund the most relevant and critical research for international companies, so we go where the best university talent ...
URL: https://www.src.org/program/grc/
Modified: 2023-10-10 - 33KB
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2: Cyclic Thermal Anneal for Dislocation Reduction (Patent P0334...: Cyclic Thermal Anneal for Dislocation Reduction Application Type: Foreign National Patent Number: 139204 Country: Taiwan Status: Filed on 26-Jun-2000, Issued on 17-Dec-2001 ...
URL: https://www.src.org/library/patent/p0334/
Modified: 2001-12-17 - 23KB
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3: Oxidation of silicon on germanium (Patent P0250) - SRC: Oxidation of silicon on germanium Application Type: Utility Patent Number: 6352942 Country: United States Status: Filed on 25-Jun-1999, Issued on 5-Mar-2002, Patent Abandoned ...
URL: https://www.src.org/library/patent/p0250/
Modified: 2002-03-05 - 23KB
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4: Cyclic Anneal for Dislocation Reduction (Patent P0255) - SRC: Cyclic Anneal for Dislocation Reduction Application Type: Utility Patent Number: 6635110 Country: United States Status: Filed on 23-Jun-2000, Issued on 21-Oct-2003 Organization: ...
URL: https://www.src.org/library/patent/p0255/
Modified: 2003-10-21 - 23KB
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5: Cyclic Thermal Anneal for Dislocation Reduction (Patent P0335...: Cyclic Thermal Anneal for Dislocation Reduction Application Type: European Patent Office Patent Number: 1192646 Status: Filed on 23-Jun-2000, Issued on 13-Aug-2008 Organization: ...
URL: https://www.src.org/library/patent/p0335/
Modified: 2008-08-13 - 23KB
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6: Oxidation of silicon on germanium (Patent P0330) - SRC: Oxidation of silicon on germanium Application Type: Foreign National Patent Number: 154359 Country: Taiwan Status: Filed on 26-Jun-2000, Issued on 15-Aug-2002, Patent Abandoned ...
URL: https://www.src.org/library/patent/p0330/
Modified: 2002-08-15 - 23KB
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7: Methods of Forming Features of Integrated Circuits Using Modified...: Methods of Forming Features of Integrated Circuits Using Modified Buried Layers and Integrated Circuits Having Features so Formed Application Type: Utility Patent Number: 6346446 ...
URL: https://www.src.org/library/patent/p0190/
Modified: 2002-02-12 - 22KB
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8: Optoelectronic Integrated Circuits Having Polycrystalline Silicon...: Optoelectronic Integrated Circuits Having Polycrystalline Silicon Waveguides Therein Application Type: Divisional Patent Number: 6108464 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0094/
Modified: 2000-08-22 - 26KB
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1 through 8 of 8 similar documents, best matches first.