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- 1:
Low-Temperature Deposition of High-Quality Aluminum Nitride Films...
- Low-Temperature Deposition of High-Quality Aluminum Nitride Films for Heat Spreading Applications Application Type: Utility Country: United States Status: Filed on 8-Feb-2021, ...
URL: https://www.src.org/library/patent/p1895/
Modified: 2021-02-08 - 29KB
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- 2:
Deposition of Aluminum Nitirde Templating Layers by Thermal Pulsed...
- Deposition of Aluminum Nitirde Templating Layers by Thermal Pulsed Chemical Vapor Deposition for the Enhancement of Aluminum Nitride Thick Films Application Type: Utility Country: ...
URL: https://www.src.org/library/patent/p2129/
Modified: 2023-05-02 - 25KB
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- 3:
Thermal ALD of Low Resistivity TiN Thin Film on Patterned Substrate...
- Thermal ALD of Low Resistivity TiN Thin Film on Patterned Substrate Application Type: Utility Country: United States Status: Filed on 6-Dec-2022, Published by Patent Office ...
URL: https://www.src.org/library/patent/p2106/
Modified: 2022-12-06 - 23KB
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- 4:
Passivation of Silicon Dioxide Defects for Atomic Layer Deposition...
- Passivation of Silicon Dioxide Defects for Atomic Layer Deposition Application Type: Utility Country: United States Status: Filed on 24-Apr-2020, Published by Patent Office ...
URL: https://www.src.org/library/patent/p1833/
Modified: 2020-04-24 - 23KB
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- 5:
Non-Volatile Multi-Level Cell Memory using a Ferroelectric Superlattic...
- Non-Volatile Multi-Level Cell Memory using a Ferroelectric Superlattice and Related Systems Application Type: Utility Patent Number: 11532355 Country: United States Status: Filed ...
URL: https://www.src.org/library/patent/p1942/
Modified: 2022-12-20 - 23KB
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- 6:
Method of Forming Low-Resistivity RU ALD Through a BI-Layer Process...
- Method of Forming Low-Resistivity RU ALD Through a BI-Layer Process and Related Structures Application Type: Utility Country: United States Status: Filed on 6-Dec-2022, Published ...
URL: https://www.src.org/library/patent/p2099/
Modified: 2022-12-06 - 23KB
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