Method of Forming Low-Resistivity RU ALD Through a BI-Layer Process and Related Structures

    • Application Type:
      Utility
      Country:
      United States
      Status:
      Filed on 6-Dec-2022, Published by Patent Office
      Organization:
      University of California, San Diego
      SRC Filing ID:
      P2099

    Inventors

    • Michael C. Breeden (UC/San Diego)
    • Victor Wang (UC/San Diego)
    • Andrew Kummel (UC/San Diego)
    • Harsono Simka (Samsung)
    • Mansour Moinpour (EMD Electronics)
    • Ravi Kanjolia (EMD Electronics)

    Related Patents

    P2083
    Filed
    JUMP

    Methods for Forming Low-Resistivity Ru ALD Through Bi-Layer Process and Related Structures

    Michael C. Breeden (UC/San Diego); Ravi Kanjolia (EMD Electronics); Andrew Kummel (UC/San Diego); Mansour Moinpour (EMD Electronics); Harsono Simka (Samsung); Victor Wang (UC/San Diego)
    Patent Application Filed (on 24-Jun-2022)
    Application Type: Provisional

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