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| 1 through 14 of
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- 1:
Invited JUMP URI Proposal Call - SRC
- Invited Proposals for JUMP Undergraduate Research Initiative (URI) - Due June 29, 2018 Program Objectives and Description Proposal Guidelines Timetable and Deadlines Program ...
URL: https://www.src.org/program/jump/uri/
Modified: 2018-06-14 - 26KB
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- 2:
JUMP Mission - SRC
- JUMP Mission The mission of JUMP is to look beyond today's technology horizon and lay the scientific groundwork that extends the viability of Moore's Law economics through 2040. ...
URL: https://www.src.org/program/jump/about/mission/
Modified: 2013-01-15 - 26KB
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- 3:
 JUMP 2.0 Center Annual Reviews
- JUMP 2.0 Center Annual Reviews JUMP 2.0 Annual Review Dates SRC Select Disclosure Center Tentative Dates Tentative Location COCOSYS May 16-17, 2023 Atlanta, Georgia Tech CUBIC June ...
URL: https://www.src.org/...s/center-annual-review-guidelines.pdf
Modified: 2023-03-14 - 197KB
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- 4:
Analyzing Optimization and Generalization in Deep Learning via...
- Analyzing Optimization and Generalization in Deep Learning via Trajectories of Gradient Descent (Option 1 of 2) Date: Tuesday, July 9, 2019, 11 a.m.-noon ET Location: via web ...
URL: https://www.src.org/calendar/e006823/
Modified: 2019-07-10 - 30KB
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- 5:
Semiconductor Research Corporation - SRC
- JUMP JUMP Joint University Microelectronics Program Supporting long-term research focused on high performance, energy efficient microelectronics for end-to-end sensing and ...
URL: https://www.src.org/program/jump/
Modified: 2023-10-10 - 29KB
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- 6:
Micron Scale Tin Oxide-Based Semiconductor Devices (Patent P1886...
- Micron Scale Tin Oxide-Based Semiconductor Devices Application Type: Utility Patent Number: 11217700 Country: United States Status: Filed on 6-Dec-2019, Published by Patent Office ...
URL: https://www.src.org/library/patent/p1886/
Modified: 2022-01-04 - 28KB
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- 7:
Micron Scale Tin Oxide-Based Semiconductor Devices (Patent P2041...
- Micron Scale Tin Oxide-Based Semiconductor Devices Application Type: Continuation Country: United States Status: Filed on 4-Jan-2022, Published by Patent Office Organization: ...
URL: https://www.src.org/library/patent/p2041/
Modified: 2022-01-04 - 28KB
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- 8:
Bio - Asif Khan - SRC
- Bio: Asif Khan Asif Khan Asif Khan is an assistant professor of the School of Electrical and Computer Engineering at the Georgia Institute of Technology. He received his Ph.D. in ...
URL: https://www.src.org/calendar/e006798/asif-khan-bio/
Modified: 2019-05-07 - 20KB
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- 9:
Correlated Orbitals Yield High-Mobility, Back-End-of-Line Compatible...
- Correlated Orbitals Yield High-Mobility, Back-End-of-Line Compatible P-Type Oxide Semiconductor Application Type: Utility Country: United States Status: Filed on 20-Dec-2022, ...
URL: https://www.src.org/library/patent/p2098/
Modified: 2022-12-20 - 25KB
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- 10:
Bio - Arijit Raychowdhury - SRC
- Bio: Arijit Raychowdhury Arijit Raychowdhury Arijit Raychowdhury is an Associate Professor in the School of Electrical and Computer Engineering at the Georgia Institute of ...
URL: https://www.src.org/...ndar/e006798/arijit-raychowdhury-bio/
Modified: 2019-05-07 - 20KB
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- 11:
ASCENT Annual Review - Day 2 Talks (August 11th) - SRC
- ASCENT Annual Review Pre-Recorded Presentations - Day 2 (August 11th) Sayeef Salahuddin Jeffrey Bokor Ramamoorthy Ramesh Dan Ralph Ian Young / Intel - Industry Speaker Madhavan ...
URL: https://www.src.org/calendar/e007136/august11/
Modified: 2021-08-11 - 25KB
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- 12:
Hybrid Charge Trap Transistor-MRAM Memory Devices (Patent P1951...
- Hybrid Charge Trap Transistor-MRAM Memory Devices Application Type: Utility Patent Number: 11328757 Country: United States Status: Filed on 23-Oct-2020, Issued on 10-May-2022 ...
URL: https://www.src.org/library/patent/p1951/
Modified: 2022-05-10 - 25KB
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- 13:
Patterning Electronic Devices using Reactive-Ion Etching of Tin...
- Patterning Electronic Devices using Reactive-Ion Etching of Tin Oxides Application Type: Utility Patent Number: 10868191 Country: United States Status: Filed on 6-Dec-2019, ...
URL: https://www.src.org/library/patent/p1879/
Modified: 2020-12-15 - 28KB
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- 14:
Pattering Electronic Devices Reactive-Ion Etching of Tin Oxides...
- Pattering Electronic Devices Reactive-Ion Etching of Tin Oxides Application Type: Continuation Country: United States Status: Filed on 9-Dec-2020, Published by Patent Office ...
URL: https://www.src.org/library/patent/p1946/
Modified: 2020-12-09 - 29KB
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