Bio: Asif Khan

Asif Khan is an assistant professor of the School of Electrical and Computer Engineering at the Georgia Institute of Technology. He received his Ph.D. in electrical engineering and computer sciences from the University of California, Berkeley in 2015. His work led to the first experimental proof-of-concept demonstration of the negative capacitance effect in ferroelectric oxides. His group at Georgia Tech conceptualizes and fabricates electronic devices that leverage interesting physics and novel phenomena in emerging materials (such as ferroelectrics, antiferroelectrics and strongly correlated systems) to overcome the “fundamental” limits in computation and to address the most pressing challenges in electronics and the semiconductor industry. His notable awards include the Qualcomm Innovation Fellowship in 2012, the Silver prize at the 5th Taiwan Semiconductor Manufacturing Company (TSMC) Outstanding Student Research Award in 2011 and the University Gold medal from Bangladesh University of Engineering and Technology. He has authored and co-authored over 80 journal and refereed conference papers, wrote two book chapters, holds one pending US patent and presented invited talks and tutorials in leading conferences on semiconductor devices and ferroelectrics including the International Electron Devices Meeting (IEDM).