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- 1:
Graphene Based Thermal Interface Materials and Methods of Manufacturin...
- Graphene Based Thermal Interface Materials and Methods of Manufacturing the Same Application Type: Utility Patent Number: 9716299 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p1463/
Modified: 2017-07-25 - 23KB
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- 2:
Graphene Device Including a PVA Layer or Formed Using a PVA Layer...
- Graphene Device Including a PVA Layer or Formed Using a PVA Layer Application Type: Continuation Patent Number: 8735209 Country: United States Status: Filed on 15-Mar-2013, Issued ...
URL: https://www.src.org/library/patent/p1404/
Modified: 2014-05-27 - 24KB
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- 3:
Graphene Device Including Angular Split Gate (Patent P1448) ...
- Graphene Device Including Angular Split Gate Application Type: Utility Patent Number: 9570559 Country: United States Status: Filed on 14-Mar-2014, Issued on 14-Feb-2017 ...
URL: https://www.src.org/library/patent/p1448/
Modified: 2017-02-14 - 22KB
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- 4:
GRAPHENE/(MULTILAYER) BORON NITRIDE HETEROEPITAXY FOR ELECTRONIC...
- GRAPHENE/(MULTILAYER) BORON NITRIDE HETEROEPITAXY FOR ELECTRONIC DEVICE APPLICATIONS Application Type: Divisional Patent Number: 8338825 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p1311/
Modified: 2012-12-25 - 24KB
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- 5:
Graphene (Multiplayer) Boron Niride Heteroepitaxy for Electronic...
- Graphene (Multiplayer) Boron Niride Heteroepitaxy for Electronic Device Applications Application Type: Continuation Patent Number: 8946692 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p1500/
Modified: 2015-02-03 - 24KB
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- 6:
All Graphene Flash Memory Device (Patent P1265) - SRC
- All Graphene Flash Memory Device Application Type: Utility Patent Number: 8772853 Country: United States Status: Filed on 12-Jul-2011, Issued on 8-Jul-2014, Patent Abandoned ...
URL: https://www.src.org/library/patent/p1265/
Modified: 2014-07-08 - 21KB
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- 7:
Methods of Forming Graphene/(Multilayer) Boron Nitride for Electronic...
- Methods of Forming Graphene/(Multilayer) Boron Nitride for Electronic Device Applications Application Type: Utility Patent Number: 8158200 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p1170/
Modified: 2012-04-17 - 24KB
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- 8:
Work Function Structure for Votltage-Controlled Magnetic Anisotropy...
- Work Function Structure for Votltage-Controlled Magnetic Anisotropy Application Type: Utility Patent Number: 11462682 Country: United States Status: Filed on 19-Feb-2021, Issued on ...
URL: https://www.src.org/library/patent/p1936/
Modified: 2022-10-04 - 25KB
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- 9:
Establishing a Uniformly Thin Dielectric Layer on Graphene in...
- Establishing a Uniformly Thin Dielectric Layer on Graphene in a Semiconductor Device without Affecting the Properties of Graphene Application Type: Utility Patent Number: 8198707 ...
URL: https://www.src.org/library/patent/p1099/
Modified: 2012-06-12 - 21KB
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- 10:
Transistor That Employs Collective Magnetic Effects Thereby Providing...
- Transistor That Employs Collective Magnetic Effects Thereby Providing Improved Energy Efficiency Application Type: Utility Patent Number: 9825218 Country: United States Status: ...
URL: https://www.src.org/library/patent/p1535/
Modified: 2017-11-21 - 22KB
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- 11:
High-Performance Gate Oxides such as for Graphene Field-Effect...
- High-Performance Gate Oxides such as for Graphene Field-Effect Transistors or Carbon Nanotubes Application Type: Utility Patent Number: 8445893 Country: United States Status: Filed ...
URL: https://www.src.org/library/patent/p1209/
Modified: 2013-05-21 - 24KB
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- 12:
Memory Device Based on Gate Controlled Ferromagnetism and Spin...
- Memory Device Based on Gate Controlled Ferromagnetism and Spin-Polarized Current Injection Application Type: Utility Patent Number: 9741416 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p1609/
Modified: 2017-08-22 - 22KB
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- 13:
Incorporating Gate Control over a Resonant Tunneling Structure...
- Incorporating Gate Control over a Resonant Tunneling Structure in CMOS to Reduce off-State Current Leakage, Supply Voltage and Power Consumption Application Type: Utility Patent ...
URL: https://www.src.org/library/patent/p1098/
Modified: 2011-08-30 - 23KB
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- 14:
Graphene-Based Gas and Bio Sensor with High Sensitivity and Selectivit...
- Graphene-Based Gas and Bio Sensor with High Sensitivity and Selectivity Application Type: Utility Patent Number: 9678036 Country: United States Status: Filed on 13-Mar-2014, Issued ...
URL: https://www.src.org/library/patent/p1470/
Modified: 2017-06-13 - 23KB
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- 15:
SRAM Cell Utilizing Bistable Diode Having GESI Structure Therein...
- SRAM Cell Utilizing Bistable Diode Having GESI Structure Therein Application Type: Utility Patent Number: 5684737 Country: United States Status: Filed on 8-Dec-1995, Issued on ...
URL: https://www.src.org/library/patent/p0057/
Modified: 1997-11-04 - 25KB
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- 16:
Direct Chemical Vapor Deposition of Graphene on Dielectric Sufraces...
- Direct Chemical Vapor Deposition of Graphene on Dielectric Sufraces Application Type: Utility Patent Number: 8709881 Country: United States Status: Filed on 2-May-2011, Issued on ...
URL: https://www.src.org/library/patent/p1273/
Modified: 2014-04-29 - 22KB
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- 17:
Spin-Transfer-Torque Synthetic Anti-Ferromagnetic Switching Device...
- Spin-Transfer-Torque Synthetic Anti-Ferromagnetic Switching Device Application Type: Utility Patent Number: 10790441 Country: United States Status: Filed on 14-Sep-2018, Issued on ...
URL: https://www.src.org/library/patent/p1699/
Modified: 2020-09-29 - 24KB
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- 18:
A Stochastic Switching Device with Adjustable Randomness (Patent...
- A Stochastic Switching Device with Adjustable Randomness Application Type: Utility Patent Number: 10607674 Country: United States Status: Filed on 25-Oct-2018, Published by Patent ...
URL: https://www.src.org/library/patent/p1807/
Modified: 2020-03-31 - 24KB
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- 19:
Spin Orbit Torque Generating Materials (Patent P1661) - SRC
- Spin Orbit Torque Generating Materials Application Type: Utility Patent Number: 10878985 Country: United States Status: Filed on 8-Dec-2017, Issued on 29-Dec-2020 Organization: ...
URL: https://www.src.org/library/patent/p1661/
Modified: 2020-12-29 - 26KB
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- 20:
Cross-Coupled Gated Tunnel Diode (XTD) Device with Increased...
- Cross-Coupled Gated Tunnel Diode (XTD) Device with Increased Peak-to-Valley Current Ratio (PVCR) Application Type: Utility Country: United States Status: Filed on 9-Mar-2022, ...
URL: https://www.src.org/library/patent/p2024/
Modified: 2022-03-09 - 23KB
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- 21:
Spin-Based Logic Device (Patent P1496) - SRC
- Spin-Based Logic Device Application Type: Utility Patent Number: 9240799 Country: United States Status: Filed on 4-Nov-2014, Issued on 19-Jan-2016, Patent Abandoned Organization: ...
URL: https://www.src.org/library/patent/p1496/
Modified: 2016-01-19 - 22KB
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- 22:
Buffered Spin-Torque Sensing Device for Global Interconnect Circuits...
- Buffered Spin-Torque Sensing Device for Global Interconnect Circuits Application Type: Utility Patent Number: 10734052 Country: United States Status: Filed on 23-Oct-2018, Issued ...
URL: https://www.src.org/library/patent/p1792/
Modified: 2020-08-04 - 25KB
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- 23:
Leveraging Precursor Molecular Composition and Structure for...
- Leveraging Precursor Molecular Composition and Structure for Atomic Layer Etching Application Type: Utility Patent Number: 11171013 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p1756/
Modified: 2021-11-09 - 25KB
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- 24:
Fast Magnetoelectric Device Based on Current-Driven Domain Wall...
- Fast Magnetoelectric Device Based on Current-Driven Domain Wall Propagation Application Type: Utility Patent Number: 10217522 Country: United States Status: Filed on 22-May-2017, ...
URL: https://www.src.org/library/patent/p1682/
Modified: 2019-02-26 - 24KB
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- 25:
Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion...
- Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion Application Type: Divisional Patent Number: 7141858 Country: United States Status: Filed on 18-Jun-2004, ...
URL: https://www.src.org/library/patent/p0482/
Modified: 2006-11-28 - 22KB
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- 26:
Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion...
- Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion Application Type: Utility Patent Number: 6794234 Country: United States Status: Filed on 9-Dec-2002, Issued on ...
URL: https://www.src.org/library/patent/p0295/
Modified: 2004-09-21 - 22KB
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- 27:
High/Low Work Function Metal Alloys for Integrated Circuit Electrodes...
- High/Low Work Function Metal Alloys for Integrated Circuit Electrodes and Methods of Fabricating Same Application Type: Utility Patent Number: 6873020 Country: United States ...
URL: https://www.src.org/library/patent/p0243/
Modified: 2005-03-29 - 22KB
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- 28:
Magneto-Electric Voltage Controlled Spin Transistors (Patent...
- Magneto-Electric Voltage Controlled Spin Transistors Application Type: Utility Patent Number: 9379232 Country: United States Status: Filed on 18-Feb-2014, Issued on 28-Jun-2016 ...
URL: https://www.src.org/library/patent/p1469/
Modified: 2016-06-28 - 27KB
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- 29:
Strontium Oxide as a Tunnel Barrier for Spin Injection and Giant...
- Strontium Oxide as a Tunnel Barrier for Spin Injection and Giant Spin Accumulation Application Type: Utility Patent Number: 10134979 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p1693/
Modified: 2018-11-20 - 24KB
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- 30:
Two-terminal Spintronic Devices (Patent P1658) - SRC
- Two-terminal Spintronic Devices Application Type: Utility Patent Number: 10283561 Country: United States Status: Filed on 12-Dec-2017, Issued on 7-May-2019 Organization: University ...
URL: https://www.src.org/library/patent/p1658/
Modified: 2019-05-07 - 29KB
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