High-Performance Gate Oxides such as for Graphene Field-Effect Transistors or Carbon Nanotubes

    • Application Type:
      Utility
      Patent Number:
      8445893
      Country:
      United States
      Status:
      Filed on 19-Jul-2010, Issued on 21-May-2013, Patent Abandoned
      Organization:
      Columbia University
      SRC Filing ID:
      P1209

    Inventors

    • Inanc Meric (Columbia)
    • Kenneth Shepard (Columbia)

    Related Patents

    P1190
    Application Expired
    FCRP

    HIGH-PERFORMANCE GATE OXIDES SUCH AS FOR GRAPHENE FIELD-EFFECT TRANSISTORS OR CARBON NANOTUBES

    Inanc Meric (Columbia); Kenneth Shepard (Columbia)
    Patent Application Expired
    Application Type: Provisional
    P1404
    Abandoned Patent
    FCRP

    Graphene Device Including a PVA Layer or Formed Using a PVA Layer

    Inanc Meric (Columbia); Kenneth Shepard (Columbia)
    Patent Abandoned
    Application Type: Continuation

    INFORMATION

    FOR MEMBERS

    SRC VALUE

    ACADEMIA

    4819 Emperor Blvd, Suite 300 Durham, NC 27703 Voice: (919) 941-9400 Fax: (919) 941-9450

    © 2024 by Semiconductor Research Corporation ®
    Access to information on this website may be limited to member companies,
    participating agencies, and qualified researchers.

    Important Information for the SRC website. This site uses cookies to store information on your computer. By continuing to use our site, you consent to our cookies. If you are not happy with the use of these cookies, please review our Cookie Policy to learn how they can be disabled. By disabling cookies, some features of the site will not work.