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- 1:
Bio - Asif Khan - SRC
- Bio: Asif Khan Asif Khan Asif Khan is an assistant professor of the School of Electrical and Computer Engineering at the Georgia Institute of Technology. He received his Ph.D. in ...
URL: https://www.src.org/calendar/e006798/asif-khan-bio/
Modified: 2019-05-07 - 20KB
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- 2:
Micron Scale Tin Oxide-Based Semiconductor Devices (Patent P2041...
- Micron Scale Tin Oxide-Based Semiconductor Devices Application Type: Continuation Country: United States Status: Filed on 4-Jan-2022, Published by Patent Office Organization: ...
URL: https://www.src.org/library/patent/p2041/
Modified: 2022-01-04 - 28KB
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- 3:
Micron Scale Tin Oxide-Based Semiconductor Devices (Patent P1886...
- Micron Scale Tin Oxide-Based Semiconductor Devices Application Type: Utility Patent Number: 11217700 Country: United States Status: Filed on 6-Dec-2019, Published by Patent Office ...
URL: https://www.src.org/library/patent/p1886/
Modified: 2022-01-04 - 28KB
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- 4:
Patterning Electronic Devices using Reactive-Ion Etching of Tin...
- Patterning Electronic Devices using Reactive-Ion Etching of Tin Oxides Application Type: Utility Patent Number: 10868191 Country: United States Status: Filed on 6-Dec-2019, ...
URL: https://www.src.org/library/patent/p1879/
Modified: 2020-12-15 - 28KB
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- 5:
Pattering Electronic Devices Reactive-Ion Etching of Tin Oxides...
- Pattering Electronic Devices Reactive-Ion Etching of Tin Oxides Application Type: Continuation Country: United States Status: Filed on 9-Dec-2020, Published by Patent Office ...
URL: https://www.src.org/library/patent/p1946/
Modified: 2020-12-09 - 29KB
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- 6:
Semiconductor Research Corporation - SRC
- JUMP JUMP Joint University Microelectronics Program Supporting long-term research focused on high performance, energy efficient microelectronics for end-to-end sensing and ...
URL: https://www.src.org/program/jump/
Modified: 2023-10-10 - 29KB
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- 7:
Hybrid Charge Trap Transistor-MRAM Memory Devices (Patent P1951...
- Hybrid Charge Trap Transistor-MRAM Memory Devices Application Type: Utility Patent Number: 11328757 Country: United States Status: Filed on 23-Oct-2020, Issued on 10-May-2022 ...
URL: https://www.src.org/library/patent/p1951/
Modified: 2022-05-10 - 25KB
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- 8:
Bio - Arijit Raychowdhury - SRC
- Bio: Arijit Raychowdhury Arijit Raychowdhury Arijit Raychowdhury is an Associate Professor in the School of Electrical and Computer Engineering at the Georgia Institute of ...
URL: https://www.src.org/...ndar/e006798/arijit-raychowdhury-bio/
Modified: 2019-05-07 - 20KB
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- 9:
Deposition of Aluminum Nitirde Templating Layers by Thermal Pulsed...
- Deposition of Aluminum Nitirde Templating Layers by Thermal Pulsed Chemical Vapor Deposition for the Enhancement of Aluminum Nitride Thick Films Application Type: Utility Country: ...
URL: https://www.src.org/library/patent/p2129/
Modified: 2023-05-02 - 25KB
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- 10:
Non-Volatile Multi-Level Cell Memory using a Ferroelectric Superlattic...
- Non-Volatile Multi-Level Cell Memory using a Ferroelectric Superlattice and Related Systems Application Type: Utility Patent Number: 11532355 Country: United States Status: Filed ...
URL: https://www.src.org/library/patent/p1942/
Modified: 2022-12-20 - 23KB
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- 11:
Correlated Orbitals Yield High-Mobility, Back-End-of-Line Compatible...
- Correlated Orbitals Yield High-Mobility, Back-End-of-Line Compatible P-Type Oxide Semiconductor Application Type: Utility Country: United States Status: Filed on 20-Dec-2022, ...
URL: https://www.src.org/library/patent/p2098/
Modified: 2022-12-20 - 25KB
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- 12:
Low-Temperature Deposition of High-Quality Aluminum Nitride Films...
- Low-Temperature Deposition of High-Quality Aluminum Nitride Films for Heat Spreading Applications Application Type: Utility Country: United States Status: Filed on 8-Feb-2021, ...
URL: https://www.src.org/library/patent/p1895/
Modified: 2021-02-08 - 29KB
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