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1 through 8 of 8 similar documents, best matches first.

1: Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...: Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Utility Patent Number: 6531354 Country: ...
URL: https://www.src.org/library/patent/p0194/
Modified: 2003-03-11 - 22KB
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2: High Dielectric Constant Metal Silicates Formed By Controlled...: High Dielectric Constant Metal Silicates Formed By Controlled Metal-Surface Reactions Application Type: Utility Patent Number: 6521911 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0270/
Modified: 2003-02-18 - 22KB
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3: Methods for Removing Contaminants on a Substrate (Patent P0252...: Methods for Removing Contaminants on a Substrate Application Type: Utility Patent Number: 6933235 Country: United States Status: Filed on 21-Nov-2002, Issued on 23-Aug-2005, Patent ...
URL: https://www.src.org/library/patent/p0252/
Modified: 2005-08-23 - 22KB
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4: Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use...: Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use in Gate Dielectrics and Methods of Making the Same Application Type: Utility Patent Number: 6552403 Country: United ...
URL: https://www.src.org/library/patent/p0095/
Modified: 2003-04-22 - 24KB
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5: Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use...: Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use in Gate Dielectrics and Methods of Making the Same Application Type: Foreign National Patent Number: NI180834 ...
URL: https://www.src.org/library/patent/p0220/
Modified: 2003-11-11 - 24KB
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6: Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use...: Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use in Gate Dielectrics and Methods of Making the Same Application Type: Divisional Patent Number: 6686264 Country: ...
URL: https://www.src.org/library/patent/p0374/
Modified: 2004-02-03 - 24KB
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7: Semiconductor Research Corporation - SRC: GRC GRC Global Research Collaboration Our motivation is to fund the most relevant and critical research for international companies, so we go where the best university talent ...
URL: https://www.src.org/program/grc/
Modified: 2023-10-10 - 33KB
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8: Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...: Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Divisional Patent Number: 6753567 Country: ...
URL: https://www.src.org/library/patent/p0375/
Modified: 2004-06-22 - 22KB
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1 through 8 of 8 similar documents, best matches first.