Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use in Gate Dielectrics and Methods of Making the Same

    • Application Type:
      Divisional
      Patent Number:
      6686264
      Country:
      United States
      Status:
      Filed on 13-Jan-2003, Issued on 3-Feb-2004, Patent Abandoned
      Organization:
      North Carolina State University
      SRC Filing ID:
      P0374

    Inventor

    • Gerald Lucovsky (NC State)

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