Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use in Gate Dielectrics and Methods of Making the Same

    • Application Type:
      Foreign National
      Patent Number:
      NI180834
      Country:
      Taiwan
      Status:
      Filed on 17-Jan-2001, Issued on 11-Nov-2003, Patent Abandoned
      Organization:
      North Carolina State University
      SRC Filing ID:
      P0220

    Inventor

    • Gerald Lucovsky (NC State)

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