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| 1 through 16 of
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- 1:
Deposition of Aluminum Nitirde Templating Layers by Thermal Pulsed...
- Deposition of Aluminum Nitirde Templating Layers by Thermal Pulsed Chemical Vapor Deposition for the Enhancement of Aluminum Nitride Thick Films Application Type: Utility Country: ...
URL: https://www.src.org/library/patent/p2129/
Modified: 2023-05-02 - 25KB
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- 2:
Low-Temperature Deposition of High-Quality Aluminum Nitride Films...
- Low-Temperature Deposition of High-Quality Aluminum Nitride Films for Heat Spreading Applications Application Type: Utility Country: United States Status: Filed on 8-Feb-2021, ...
URL: https://www.src.org/library/patent/p1895/
Modified: 2021-02-08 - 29KB
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- 3:
Thermal ALD of Low Resistivity TiN Thin Film on Patterned Substrate...
- Thermal ALD of Low Resistivity TiN Thin Film on Patterned Substrate Application Type: Utility Country: United States Status: Filed on 6-Dec-2022, Published by Patent Office ...
URL: https://www.src.org/library/patent/p2106/
Modified: 2022-12-06 - 23KB
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- 4:
Micron Scale Tin Oxide-Based Semiconductor Devices (Patent P2041...
- Micron Scale Tin Oxide-Based Semiconductor Devices Application Type: Continuation Country: United States Status: Filed on 4-Jan-2022, Published by Patent Office Organization: ...
URL: https://www.src.org/library/patent/p2041/
Modified: 2022-01-04 - 28KB
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- 5:
Pattering Electronic Devices Reactive-Ion Etching of Tin Oxides...
- Pattering Electronic Devices Reactive-Ion Etching of Tin Oxides Application Type: Continuation Country: United States Status: Filed on 9-Dec-2020, Published by Patent Office ...
URL: https://www.src.org/library/patent/p1946/
Modified: 2020-12-09 - 29KB
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- 6:
Ferroelectric and Multiferroic Material Structures (Patent P1940...
- Ferroelectric and Multiferroic Material Structures Application Type: Utility Patent Number: 11678587 Country: United States Status: Filed on 21-Oct-2020, Issued on 13-Jun-2023 ...
URL: https://www.src.org/library/patent/p1940/
Modified: 2023-06-13 - 23KB
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- 7:
Micron Scale Tin Oxide-Based Semiconductor Devices (Patent P1886...
- Micron Scale Tin Oxide-Based Semiconductor Devices Application Type: Utility Patent Number: 11217700 Country: United States Status: Filed on 6-Dec-2019, Published by Patent Office ...
URL: https://www.src.org/library/patent/p1886/
Modified: 2022-01-04 - 28KB
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- 8:
Patterning Electronic Devices using Reactive-Ion Etching of Tin...
- Patterning Electronic Devices using Reactive-Ion Etching of Tin Oxides Application Type: Utility Patent Number: 10868191 Country: United States Status: Filed on 6-Dec-2019, ...
URL: https://www.src.org/library/patent/p1879/
Modified: 2020-12-15 - 28KB
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- 9:
New Precursors and Processes for The Thermal ALD of Cobalt Metal...
- New Precursors and Processes for The Thermal ALD of Cobalt Metal Thin Films Application Type: Utility Country: United States Status: Filed on 21-Jul-2020, Published by Patent ...
URL: https://www.src.org/library/patent/p1863/
Modified: 2020-07-21 - 26KB
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- 10:
Non-Volatile Multi-Level Cell Memory using a Ferroelectric Superlattic...
- Non-Volatile Multi-Level Cell Memory using a Ferroelectric Superlattice and Related Systems Application Type: Utility Patent Number: 11532355 Country: United States Status: Filed ...
URL: https://www.src.org/library/patent/p1942/
Modified: 2022-12-20 - 23KB
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- 11:
Method of Forming Low-Resistivity RU ALD Through a BI-Layer Process...
- Method of Forming Low-Resistivity RU ALD Through a BI-Layer Process and Related Structures Application Type: Utility Country: United States Status: Filed on 6-Dec-2022, Published ...
URL: https://www.src.org/library/patent/p2099/
Modified: 2022-12-06 - 23KB
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- 12:
Correlated Orbitals Yield High-Mobility, Back-End-of-Line Compatible...
- Correlated Orbitals Yield High-Mobility, Back-End-of-Line Compatible P-Type Oxide Semiconductor Application Type: Utility Country: United States Status: Filed on 20-Dec-2022, ...
URL: https://www.src.org/library/patent/p2098/
Modified: 2022-12-20 - 25KB
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- 13:
Passivation of Silicon Dioxide Defects for Atomic Layer Deposition...
- Passivation of Silicon Dioxide Defects for Atomic Layer Deposition Application Type: Utility Country: United States Status: Filed on 24-Apr-2020, Published by Patent Office ...
URL: https://www.src.org/library/patent/p1833/
Modified: 2020-04-24 - 23KB
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- 14:
Suboxide Molecular-Beam Epitaxy and Related Structures (Patent...
- Suboxide Molecular-Beam Epitaxy and Related Structures Application Type: Utility Patent Number: 11462402 Country: United States Status: Filed on 21-Oct-2020, Issued on 4-Oct-2022 ...
URL: https://www.src.org/library/patent/p1933/
Modified: 2022-10-04 - 23KB
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- 15:
Semiconductor Research Corporation - SRC
- JUMP JUMP Joint University Microelectronics Program Supporting long-term research focused on high performance, energy efficient microelectronics for end-to-end sensing and ...
URL: https://www.src.org/program/jump/
Modified: 2023-10-10 - 29KB
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- 16:
JUMP Mission - SRC
- JUMP Mission The mission of JUMP is to look beyond today's technology horizon and lay the scientific groundwork that extends the viability of Moore's Law economics through 2040. ...
URL: https://www.src.org/program/jump/about/mission/
Modified: 2013-01-15 - 26KB
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