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1 through 27 of 27 similar documents, best matches first.   
1: Semiconductor Research Corporation - SRC
GRC GRC Global Research Collaboration Our motivation is to fund the most relevant and critical research for international companies, so we go where the best university talent ...
URL: https://www.src.org/program/grc/
Modified: 2023-10-10 - 33KB
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2: Vertical Gate-depleted single electron transistors (Patent P0427...
Vertical Gate-depleted single electron transistors Application Type: Foreign National Patent Number: 92132776 Country: Taiwan Status: Filed on 21-Nov-2003, Issued on 13-Nov-2006 ...
URL: https://www.src.org/library/patent/p0427/
Modified: 2006-11-13 - 22KB
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3: Vertical Gate-Depleted Single Electron Transistors (Patent P0320...
Vertical Gate-Depleted Single Electron Transistors Application Type: Utility Patent Number: 7547932 Country: United States Status: Filed on 22-Nov-2002, Issued on 16-Jun-2009, ...
URL: https://www.src.org/library/patent/p0320/
Modified: 2009-06-16 - 22KB
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4: Planar Tungsten Interconnect (Patent P0123) - SRC
Planar Tungsten Interconnect Application Type: Utility Patent Number: 4746621 Country: United States Status: Filed on 5-Dec-1986, Issued on 24-May-1988, Patent Expired ...
URL: https://www.src.org/library/patent/p0123/
Modified: 1988-05-24 - 22KB
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5: Quantum Bridges Fabricated by Selective Etching of Superlattice...
Quantum Bridges Fabricated by Selective Etching of Superlattice Structures Application Type: Utility Patent Number: 5539214 Country: United States Status: Filed on 6-Feb-1995, ...
URL: https://www.src.org/library/patent/p0010/
Modified: 1996-07-23 - 22KB
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6: SRAM Cell Utilizing Bistable Diode Having GESI Structure Therein...
SRAM Cell Utilizing Bistable Diode Having GESI Structure Therein Application Type: Utility Patent Number: 5684737 Country: United States Status: Filed on 8-Dec-1995, Issued on ...
URL: https://www.src.org/library/patent/p0057/
Modified: 1997-11-04 - 25KB
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7: Bipolar Transistor Having Base Region With Coupled Delta Layers...
Bipolar Transistor Having Base Region With Coupled Delta Layers Application Type: Continuation (in part) Patent Number: 5965931 Country: United States Status: Filed on 15-Sep-1994, ...
URL: https://www.src.org/library/patent/p0003/
Modified: 1999-10-12 - 35KB
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8: Method of Fabricating Quantum Bridges by Selective Etching of...
Method of Fabricating Quantum Bridges by Selective Etching of Superlattice Structures Application Type: Utility Patent Number: 5630905 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0008/
Modified: 1997-05-20 - 35KB
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9: Methods of Forming Nano-Scale Electronic and Optoelectronic Devices...
Methods of Forming Nano-Scale Electronic and Optoelectronic Devices Using Non-Photolithographically Defined Nano-Channel Templates Application Type: Utility Patent Number: 6709929 ...
URL: https://www.src.org/library/patent/p0301/
Modified: 2004-03-23 - 25KB
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10: Optoelectronic Devices Having Arrays of Quantum Dot Compound...
Optoelectronic Devices Having Arrays of Quantum Dot Compound Semiconductors Superlattices Therein Application Type: Divisional Patent Number: 7265375 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0553/
Modified: 2007-09-04 - 25KB
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11: Optoelectronic Devices having Arrays of Quantum Dot Compound...
Optoelectronic Devices having Arrays of Quantum Dot Compound Semiconductors Superlattices Therein Application Type: Divisional Patent Number: 6914256 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0443/
Modified: 2005-07-05 - 25KB
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12: Semiconductor-On-Insulator Electronic Devices Having Trench Isolated...
Semiconductor-On-Insulator Electronic Devices Having Trench Isolated Monocrystalline Active Regions Application Type: Utility Patent Number: 5481126 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0027/
Modified: 1996-01-02 - 22KB
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13: Optoelectronic Integrated Circuits Having Polycrystalline Silicon...
Optoelectronic Integrated Circuits Having Polycrystalline Silicon Waveguides Therein Application Type: Divisional Patent Number: 6108464 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0094/
Modified: 2000-08-22 - 26KB
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14: Method of Forming Semiconductor-On-Insulator Electronic Devices...
Method of Forming Semiconductor-On-Insulator Electronic Devices by Growing Monocrystalline Semiconducting Regions from Trench Sidewalls Application Type: Utility Patent Number: ...
URL: https://www.src.org/library/patent/p0025/
Modified: 1996-02-27 - 22KB
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15: Bipolar Transistor by Selective and Lateral Epitaxial Overgrowth...
Bipolar Transistor by Selective and Lateral Epitaxial Overgrowth Application Type: Utility Patent Number: 4829016 Country: United States Status: Filed on 19-Oct-1987, Issued on ...
URL: https://www.src.org/library/patent/p0120/
Modified: 1989-05-09 - 22KB
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16: Floating Gate Transistor Having Buried Strained Silicon Germanium...
Floating Gate Transistor Having Buried Strained Silicon Germanium Channel Layer Application Type: Utility Patent Number: 6313486 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0092/
Modified: 2001-11-06 - 23KB
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17: Submicron MOSFET having Asymmetric Channel Profile (Patent P0303...
Submicron MOSFET having Asymmetric Channel Profile Application Type: Utility Patent Number: 6744083 Country: United States Status: Filed on 1-Oct-2002, Issued on 1-Jun-2004 ...
URL: https://www.src.org/library/patent/p0303/
Modified: 2004-06-01 - 22KB
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18: High Mobility Heterojunction Transistor and Method (Patent P0208...
High Mobility Heterojunction Transistor and Method Application Type: Foreign National Patent Number: NI179065 Country: Taiwan Status: Filed on 24-May-2001, Issued on 6-Nov-2003 ...
URL: https://www.src.org/library/patent/p0208/
Modified: 2003-11-06 - 24KB
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19: High Mobility Heterojunction Transistor and Method (Patent P0083...
High Mobility Heterojunction Transistor and Method Application Type: Utility Patent Number: 6319799 Country: United States Status: Filed on 9-May-2000, Issued on 20-Nov-2001 ...
URL: https://www.src.org/library/patent/p0083/
Modified: 2001-11-20 - 24KB
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20: Cyclic Anneal for Dislocation Reduction (Patent P0255) - SRC
Cyclic Anneal for Dislocation Reduction Application Type: Utility Patent Number: 6635110 Country: United States Status: Filed on 23-Jun-2000, Issued on 21-Oct-2003 Organization: ...
URL: https://www.src.org/library/patent/p0255/
Modified: 2003-10-21 - 23KB
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21: Cyclic Thermal Anneal for Dislocation Reduction (Patent P0335...
Cyclic Thermal Anneal for Dislocation Reduction Application Type: European Patent Office Patent Number: 1192646 Status: Filed on 23-Jun-2000, Issued on 13-Aug-2008 Organization: ...
URL: https://www.src.org/library/patent/p0335/
Modified: 2008-08-13 - 23KB
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22: Method for Fabricating a Triple Self-Aligned Bipolar Junction...
Method for Fabricating a Triple Self-Aligned Bipolar Junction Transistor Application Type: Divisional Patent Number: 5434092 Country: United States Status: Filed on 4-Jan-1994, ...
URL: https://www.src.org/library/patent/p0036/
Modified: 1995-07-18 - 22KB
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23: Cyclic Thermal Anneal for Dislocation Reduction (Patent P0334...
Cyclic Thermal Anneal for Dislocation Reduction Application Type: Foreign National Patent Number: 139204 Country: Taiwan Status: Filed on 26-Jun-2000, Issued on 17-Dec-2001 ...
URL: https://www.src.org/library/patent/p0334/
Modified: 2001-12-17 - 23KB
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24: Oxidation of silicon on germanium (Patent P0250) - SRC
Oxidation of silicon on germanium Application Type: Utility Patent Number: 6352942 Country: United States Status: Filed on 25-Jun-1999, Issued on 5-Mar-2002, Patent Abandoned ...
URL: https://www.src.org/library/patent/p0250/
Modified: 2002-03-05 - 23KB
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25: Oxidation of silicon on germanium (Patent P0330) - SRC
Oxidation of silicon on germanium Application Type: Foreign National Patent Number: 154359 Country: Taiwan Status: Filed on 26-Jun-2000, Issued on 15-Aug-2002, Patent Abandoned ...
URL: https://www.src.org/library/patent/p0330/
Modified: 2002-08-15 - 23KB
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26: Vertical Channel Floating Gate Transistor Having Silicon Germanium...
Vertical Channel Floating Gate Transistor Having Silicon Germanium Channel Layer Application Type: Utility Patent Number: 6313487 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0091/
Modified: 2001-11-06 - 22KB
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27: Methods of Forming Features of Integrated Circuits Using Modified...
Methods of Forming Features of Integrated Circuits Using Modified Buried Layers and Integrated Circuits Having Features so Formed Application Type: Utility Patent Number: 6346446 ...
URL: https://www.src.org/library/patent/p0190/
Modified: 2002-02-12 - 22KB
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1 through 27 of 27 similar documents, best matches first.