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| 1 through 11 of
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- 1:
 Slide 1
- 230 250 270 290 310 0 0 0 0 0 0 0 0 1 2 240 260 280 300 V G (mV) V G (mV) I (nA) V SD = - 30 mV The absence of steps the sequential nature coupling of the atom. Figure 4b shows ...
URL: https://www.src.org/calendar/e004100/e004100-00-session3.pdf
Modified: 2010-11-29 - 29.2MB
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- 2:
Microsoft Word - ITRSpaperfinal.doc
- Transport metrology for ultra-scaled MOSFETs G.C. Tettamanzi 1,* , G.P. Lansbergen 1 , J. Verduijn 1 , R. Rahman 2 , A. Paul 2 , S. Lee 2 N. Collaert 3 , S. Biesemans 3 , G. ...
URL: https://www.src.org/...004100-09-executive-summary-rogge.pdf
Modified: 2010-11-09 - 356KB
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- 3:
Slide 1
- ITRS - Deterministic Doping, Thomas Schenkel, LBNL, Nov. 12, 2010 Single Ion Implantation Thomas Schenkel Lawrence Berkeley National Laboratory T_Schenkel@LBL.gov ITRS - ...
URL: https://www.src.org/calendar/e004100/e004100-00-session2.pdf
Modified: 2010-11-29 - 52.6MB
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- 4:
E003676 - Memory Forum - Materials for Future Memories
- Materials For Future Memories Prof. Tseng, Tseung-Yuen 2009/10/20 2009/10/20 Department of Electronics Engineering and Institute of Electronics , National Chiao Tung University, ...
URL: https://www.src.org/calendar/e003676/tseng.pdf
Modified: 2010-07-29 - 4.1MB
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- 5:
Microsoft Word - Executive Summary [Koji INOUE][1].doc
- 1 Participants only: Not for distribution. 2nd Deterministic Doping Workshop November 12, 2010, UC Berkeley ) 50nm n-MOS p-MOS X Y Z Fig. 1. 3D elemental maps of full sections of ...
URL: https://www.src.org/...004100-07-executive-summary-inoue.pdf
Modified: 2010-11-09 - 1.3MB
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- 6:
E003676 - Memory Forum - Polymer Electronic Memories: Materials...
- Polymer Electronic Memories: Polymer Electronic Memories: Materials Devices and Mechanisms Materials Devices and Mechanisms Materials, Devices and Mechanisms Materials, Devices and ...
URL: https://www.src.org/calendar/e003676/zhu.pdf
Modified: 2010-07-29 - 3.2MB
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- 7:
E003676 - Memory Forum - Strukov
- OUTL OUTL 1. HP's memristor and ap 2. Models of resistance sw 3 Volatility speed tradeo 3. Volatility speed tradeo 4. 3D circuit architecture 5. Proposal for evaluatio LINE LINE ...
URL: https://www.src.org/calendar/e003676/strukov.pdf
Modified: 2010-07-29 - 1.4MB
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- 8:
E003676 - Memory Forum - Materials for ReRAM
- SRC/NSF/A*STAR Forum on 2020 Semiconductor Memory Strategies: P D i d A hit t O t 20 21 2009 Si Processes, Devices, and Architectures, Oct. 20-21, 2009, Singapore Panel II: ...
URL: https://www.src.org/calendar/e003676/akinaga.pdf
Modified: 2010-07-29 - 620KB
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- 9:
E003676 - Memory Forum - My (Optimistic) 3 Cents to Flash Scaling
- My (Optimistic) 3 Cents to Flash Scaling Flash Scaling Electrostatics, Resonant Tunneling and Planar Stacks Edwin C. Kan El t i l d C t E i i Electrical and Computer Engineering ...
URL: https://www.src.org/calendar/e003676/kan.pdf
Modified: 2010-07-29 - 982KB
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- 10:
E003676 - SRC/NSF/A*STAR Forum on 2020 Semiconductor Memory Strategies...
- SRC/NSF/A*STAR Forum on 2020 Semiconductor Memory Strategies: Processes, Devices, and Architectures I. Introduction In 1957, Richard Feynman asked in a lecture at Caltech if it ...
URL: https://www.src.org/calendar/e003676/finalreport.pdf
Modified: 2010-07-29 - 526KB
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- 11:
Bioelectronics: The Convergence of Biology and Electronics
- Report prepared by: Glenn M. Walker Joint Department of Biomedical Engineering at the University of North Carolina at Chapel Hill and North Carolina State University J. Michael ...
URL: https://www.src.org/...dar/e003426/roadmapping-framework.pdf
Modified: 2010-06-21 - 1.3MB
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