2022 Logic and Memory Devices Annual Review

Tuesday, October 25, 2022

Presentation Videos 

• Jiyoung Kim / UT/Dallas
• Wenjuan Zhu & Shaloo Rakheja / UIUC
• Uttam Singisetti & Hongping Zhao / Univ. at Buffalo
• Shengxi Huang & Swaroop Ghosh / Penn State
• Bilge Yildiz & Jesus A. del Alamo / MIT
• Ananth Dodabalapur & Saikat Chakraborty / UT/Austin
• Hyunsang Hwang / POSTECH
• Sanjay K. Banerjee & Jatin Singh / UT/Austin
• Charles Ahn / Yale
• Jesus A. del Alamo / MIT

P1Jiyoung Kim / UT/Dallas

3001.001 Low Temperature HZO Ferroelectric Technology for FEOL and BEOL Applications

P2Wenjuan Zhu & Shaloo Rakheja / UIUC

3042.001 Solving Memory Bottleneck with Transformable Logic Devices and 3D Hybrid‐Core Systems

P3Uttam Singisetti & Hongping Zhao / Univ. at Buffalo

3007.001 High Speed Ultrawide Bandgap Gallium Oxide Transistors

P4Shengxi Huang & Swaroop Ghosh / Penn State

3011.001 Exploring Weyl Semimetals-Based Interconnect, Via, and TSV

P5Bilge Yildiz & Jesus A. del Alamo / MIT

3010.001 Electrochemical Artificial Synapse (EAS) Based on Ion Intercalation

P6Ananth Dodabalapur & Saikat Chakraborty / UT/Austin

2962.001 Thin Film Back-end Transistors for ultra-low Leakage, High-density Memory Applications

P9Hyunsang Hwang / POSTECH

2956.001 Materials Design for Steep Subthreshold Slope MOSFET with Single Atomic Scale Filament

P10Sanjay K. Banerjee & Jatin Singh / UT/Austin

3009.001 CVD TMD CMOS Process Integration

P11Charles Ahn / Yale

3008.001 The Development of a Monolayer Ferroelectric ZrO2

P12Jesus A. del Alamo / MIT

3000.001 Ferroelectric Domain Switching in the GHz Regime