2022 Logic and Memory Devices Annual Review

Tuesday, October 25, 2022

Presentation Videos 

• John T. Heron / Univ. of Michigan
• Kenneth E. Goodson & Mehdi Asheghi-Roudheni / Stanford
• Christopher Hinkle / Univ. of Notre Dame
• Reinhold H. Dauskardt / Stanford
• Luqiao Liu / MIT
• Tomas Palacios & Xi Ling / MIT
• Roy Olsson / Univ. of Pennsylvania
• Sumeet K. Gupta / Purdue
• Kai Ni / RIT

P13John T. Heron / Univ. of Michigan

3006.001 Non-volatile Magnetoelectric Switching of a Nanomagnet Below 250 mV and 100 aJ Dissipation Through Enhanced Thin Film Magnetostriction

P14Kenneth E. Goodson & Mehdi Asheghi-Roudheni / Stanford

3004.001 Interfacial Phase Change Memory (IPCM): Multi-bit/Cell Storage, Scaling, Performance Optimization and Understanding

P15Christopher Hinkle / Univ. of Notre Dame

3002.001 New Layered 2D Gate Dielectrics for Scaled BEOL Transistors

P16Reinhold H. Dauskardt / Stanford

2957.001 Advanced Computational Modeling for Reliable Design and Processing of Dielectric Materials

P17Luqiao Liu / MIT

3003.001 Anti-damping Field-free SOT-MRAM with Out-of-Plane Polarized Spin Injection

P18Tomas Palacios & Xi Ling / MIT

2963.001 Low-Temperature 3D Integration of Wide Bandgap RF and Power Electronics on Si CMOS Platform

P20Roy Olsson / Univ. of Pennsylvania

2955.001 Doped Aluminum Nitride Ferroelectric Memories

P21Sumeet K. Gupta / Purdue

2959.001 Material, Device and Circuit-Compatible Modeling of HZO based Ferroelectric and Anti-Ferroelectric Transistors

P22Kai Ni / RIT

2999.001 Understanding the Interplay between Charge Trapping and Polarization Switching Through Complementary Ferroelectric FETs and Exploring Novel Technology Applications