Strain Gated Transistors and Method

• Application Type:

  Utility

  Patent Number:

  10263107

  Country:

  United States

  Status:

  Filed on 1-May-2017, Issued on 16-Apr-2019

  Organization:

  University of California, Riverside

  SRC Filing ID:

  P1696

Inventors

• Cengiz Ozkan (UC/Riverside)
• Yu Chai (UC/Riverside)
• Mihrimah Ozkan (UC/Riverside)
• Roger Lake (UC/Riverside)