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- 1:
Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion...
- Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion Application Type: Divisional Patent Number: 7141858 Country: United States Status: Filed on 18-Jun-2004, ...
URL: https://www.src.org/library/patent/p0482/
Modified: 2006-11-28 - 22KB Find Similar Documents
- 2:
Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion...
- Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion Application Type: Utility Patent Number: 6794234 Country: United States Status: Filed on 9-Dec-2002, Issued on ...
URL: https://www.src.org/library/patent/p0295/
Modified: 2004-09-21 - 22KB Find Similar Documents
- 3:
Semiconductor Devices Having an Interfacial Dielectric Layer...
- Semiconductor Devices Having an Interfacial Dielectric Layer and Related Methods Application Type: Utility Patent Number: 7507629 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0450/
Modified: 2009-03-24 - 23KB Find Similar Documents
- 4:
High/Low Work Function Metal Alloys for Integrated Circuit Electrodes...
- High/Low Work Function Metal Alloys for Integrated Circuit Electrodes and Methods of Fabricating Same Application Type: Utility Patent Number: 6873020 Country: United States ...
URL: https://www.src.org/library/patent/p0243/
Modified: 2005-03-29 - 22KB Find Similar Documents
- 5:
Incorporating Gate Control over a Resonant Tunneling Structure...
- Incorporating Gate Control over a Resonant Tunneling Structure in CMOS to Reduce off-State Current Leakage, Supply Voltage and Power Consumption Application Type: Utility Patent ...
URL: https://www.src.org/library/patent/p1098/
Modified: 2011-08-30 - 23KB Find Similar Documents
- 6:
Optoelectronic Devices Having Arrays of Quantum Dot Compound...
- Optoelectronic Devices Having Arrays of Quantum Dot Compound Semiconductors Superlattices Therein Application Type: Divisional Patent Number: 7265375 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0553/
Modified: 2007-09-04 - 25KB Find Similar Documents
- 7:
Optoelectronic Devices having Arrays of Quantum Dot Compound...
- Optoelectronic Devices having Arrays of Quantum Dot Compound Semiconductors Superlattices Therein Application Type: Divisional Patent Number: 6914256 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0443/
Modified: 2005-07-05 - 25KB Find Similar Documents
- 8:
High Dielectric Constant Metal Silicates Formed By Controlled...
- High Dielectric Constant Metal Silicates Formed By Controlled Metal-Surface Reactions Application Type: Utility Patent Number: 6521911 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0270/
Modified: 2003-02-18 - 22KB Find Similar Documents
- 9:
Methods of Forming Nano-Scale Electronic and Optoelectronic Devices...
- Methods of Forming Nano-Scale Electronic and Optoelectronic Devices Using Non-Photolithographically Defined Nano-Channel Templates Application Type: Utility Patent Number: 6709929 ...
URL: https://www.src.org/library/patent/p0301/
Modified: 2004-03-23 - 25KB Find Similar Documents
- 10:
Germanium Silicon Dioxide Gate MOSFET (Patent P0098) - SRC
- Germanium Silicon Dioxide Gate MOSFET Application Type: Utility Patent Number: 5101247 Country: United States Status: Filed on 27-Apr-1990, Issued on 31-Mar-1992, Patent Expired ...
URL: https://www.src.org/library/patent/p0098/
Modified: 1992-03-31 - 22KB Find Similar Documents
- 11:
Spin Transistor Having Multiferroic Gate Dielectric (Patent P1282...
- Spin Transistor Having Multiferroic Gate Dielectric Application Type: Utility Patent Number: 8860006 Country: United States Status: Filed on 25-Mar-2011, Issued on 14-Oct-2014, ...
URL: https://www.src.org/library/patent/p1282/
Modified: 2014-10-14 - 23KB Find Similar Documents
- 12:
Inhibiting Address Transitions in Unselected Memory Banks of...
- Inhibiting Address Transitions in Unselected Memory Banks of Solid State Memory Circuits Application Type: Utility Patent Number: 8787086 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p1168/
Modified: 2014-07-22 - 25KB Find Similar Documents
- 13:
New Precursors and Processes for The Thermal ALD of Cobalt Metal...
- New Precursors and Processes for The Thermal ALD of Cobalt Metal Thin Films Application Type: Utility Country: United States Status: Filed on 21-Jul-2020, Published by Patent ...
URL: https://www.src.org/library/patent/p1863/
Modified: 2020-07-21 - 26KB Find Similar Documents
- 14:
Thin Film Transition Metal Dichalcogenides and Methods (Patent...
- Thin Film Transition Metal Dichalcogenides and Methods Application Type: Utility Patent Number: 9991390 Country: United States Status: Filed on 30-Sep-2015, Issued on 5-Jun-2018 ...
URL: https://www.src.org/library/patent/p1685/
Modified: 2018-06-05 - 24KB Find Similar Documents
- 15:
Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use...
- Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use in Gate Dielectrics and Methods of Making the Same Application Type: Utility Patent Number: 6552403 Country: United ...
URL: https://www.src.org/library/patent/p0095/
Modified: 2003-04-22 - 24KB Find Similar Documents
- 16:
Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use...
- Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use in Gate Dielectrics and Methods of Making the Same Application Type: Foreign National Patent Number: NI180834 ...
URL: https://www.src.org/library/patent/p0220/
Modified: 2003-11-11 - 24KB Find Similar Documents
- 17:
Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use...
- Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use in Gate Dielectrics and Methods of Making the Same Application Type: Divisional Patent Number: 6686264 Country: ...
URL: https://www.src.org/library/patent/p0374/
Modified: 2004-02-03 - 24KB Find Similar Documents
- 18:
Low Power, Race Free Programmable Logic Arrays (Patent P1014...
- Low Power, Race Free Programmable Logic Arrays Application Type: Utility Patent Number: 7541832 Country: United States Status: Filed on 30-Apr-2007, Issued on 2-Jun-2009, Patent ...
URL: https://www.src.org/library/patent/p1014/
Modified: 2009-06-02 - 23KB Find Similar Documents
- 19:
Nonvolatile Digital Computing with Ferroelectric FET (Patent...
- Nonvolatile Digital Computing with Ferroelectric FET Application Type: Utility Patent Number: 10475514 Country: United States Status: Filed on 10-May-2018, Issued on 12-Nov-2019 ...
URL: https://www.src.org/library/patent/p1781/
Modified: 2019-11-12 - 26KB Find Similar Documents
- 20:
Nonvoliatile Digital Computing with Ferroelectric FET (Patent...
- Nonvoliatile Digital Computing with Ferroelectric FET Application Type: Divisional Patent Number: 10672475 Country: United States Status: Filed on 24-Sep-2019, Issued on 2-Jun-2020 ...
URL: https://www.src.org/library/patent/p1852/
Modified: 2020-06-02 - 26KB Find Similar Documents
- 21:
Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...
- Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Utility Patent Number: 6531354 Country: ...
URL: https://www.src.org/library/patent/p0194/
Modified: 2003-03-11 - 22KB Find Similar Documents
- 22:
Dynamic Threshold Voltage Mosfet Having Gate to Body Connection...
- Dynamic Threshold Voltage Mosfet Having Gate to Body Connection for Ultra-Low Voltage Operation Application Type: Utility Patent Number: 5559368 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0004/
Modified: 1996-09-24 - 22KB Find Similar Documents
- 23:
Low Power Sense Amplifier Based on Phase Transition Material...
- Low Power Sense Amplifier Based on Phase Transition Material Application Type: Continuation Patent Number: 10839880 Country: United States Status: Filed on 31-Jan-2019, Issued on ...
URL: https://www.src.org/library/patent/p1846/
Modified: 2020-11-17 - 25KB Find Similar Documents
- 24:
Sram Cell with Intrinsically High Stability and Low Leakage ...
- Sram Cell with Intrinsically High Stability and Low Leakage Application Type: Utility Patent Number: 7920409 Country: United States Status: Filed on 5-Jun-2007, Issued on ...
URL: https://www.src.org/library/patent/p1015/
Modified: 2011-04-05 - 24KB Find Similar Documents
- 25:
Low-Power, P-Channel Enhancement-Type Metal-Oxide Semiconductor...
- Low-Power, P-Channel Enhancement-Type Metal-Oxide Semiconductor Field-Effect Transistor (PMOSFET) SRAM Cells Application Type: Utility Patent Number: 7286389 Country: United States ...
URL: https://www.src.org/library/patent/p0579/
Modified: 2007-10-23 - 24KB Find Similar Documents
- 26:
Synthesis and Characterization of First Row Transition Metal...
- Synthesis and Characterization of First Row Transition Metal Complexes Containing a-Imino Alkoxide as Precursors for Deposition of Metal Films Application Type: Utility Patent ...
URL: https://www.src.org/library/patent/p1373/
Modified: 2017-09-12 - 22KB Find Similar Documents
- 27:
Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...
- Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Divisional Patent Number: 6753567 Country: ...
URL: https://www.src.org/library/patent/p0375/
Modified: 2004-06-22 - 22KB Find Similar Documents
- 28:
Power Rectifier Using Tunneling Field Effect Transistor (Patent...
- Power Rectifier Using Tunneling Field Effect Transistor Application Type: Utility Patent Number: 9391068 Country: United States Status: Filed on 11-Aug-2014, Issued on 12-Jul-2016 ...
URL: https://www.src.org/library/patent/p1430/
Modified: 2016-07-12 - 23KB Find Similar Documents
- 29:
Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...
- Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Foreign National Patent Number: NI154861 ...
URL: https://www.src.org/library/patent/p0580/
Modified: 2008-12-01 - 22KB Find Similar Documents
- 30:
Low Power Current Sense Amplifier Based on Phase Transition Material...
- Low Power Current Sense Amplifier Based on Phase Transition Material Application Type: Utility Patent Number: 10262714 Country: United States Status: Filed on 5-Jun-2017, Issued on ...
URL: https://www.src.org/library/patent/p1665/
Modified: 2019-04-16 - 25KB Find Similar Documents
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