[x]
GRC Science Area
MPS – Material & Process Sciences
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1 through 14 of
14 similar documents, best matches first. |
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- 1:
Semiconductor Research Corporation - SRC
- GRC GRC Global Research Collaboration Our motivation is to fund the most relevant and critical research for international companies, so we go where the best university talent ...
URL: https://www.src.org/program/grc/
Modified: 2023-10-10 - 33KB Find Similar Documents
- 2:
Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion...
- Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion Application Type: Divisional Patent Number: 7141858 Country: United States Status: Filed on 18-Jun-2004, ...
URL: https://www.src.org/library/patent/p0482/
Modified: 2006-11-28 - 22KB Find Similar Documents
- 3:
Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion...
- Dual Work Function CMOS Gate Technology Based on Metal Interdiffusion Application Type: Utility Patent Number: 6794234 Country: United States Status: Filed on 9-Dec-2002, Issued on ...
URL: https://www.src.org/library/patent/p0295/
Modified: 2004-09-21 - 22KB Find Similar Documents
- 4:
Solventless, Resistless, Direct Dielectric Patterning (Patent...
- Solventless, Resistless, Direct Dielectric Patterning Application Type: Foreign National Patent Number: 171285 Country: Taiwan Status: Filed on 9-Jan-2001, Issued on 2-Jun-2003, ...
URL: https://www.src.org/library/patent/p0207/
Modified: 2003-06-02 - 22KB Find Similar Documents
- 5:
Solventless, Resistless, Direct Dielectric Patterning (Patent...
- Solventless, Resistless, Direct Dielectric Patterning Application Type: European Patent Office Patent Number: 1269259 Status: Filed on 11-Jan-2001, Issued on 8-Aug-2012, Patent ...
URL: https://www.src.org/library/patent/p0308/
Modified: 2012-08-08 - 22KB Find Similar Documents
- 6:
Method for Patterning a Radiation Sensitive Layer (Patent P0087...
- Method for Patterning a Radiation Sensitive Layer Application Type: Utility Patent Number: 6509138 Country: United States Status: Filed on 12-Jan-2000, Issued on 21-Jan-2003 ...
URL: https://www.src.org/library/patent/p0087/
Modified: 2003-01-21 - 22KB Find Similar Documents
- 7:
Capacitorless Dram Device on Silicon-On-Insulator Substrate ...
- Capacitorless Dram Device on Silicon-On-Insulator Substrate Application Type: Utility Patent Number: 5448513 Country: United States Status: Filed on 2-Dec-1993, Issued on ...
URL: https://www.src.org/library/patent/p0032/
Modified: 1995-09-05 - 25KB Find Similar Documents
- 8:
Capacitorless Dram Device on Silicon-On-Insulator Substrate ...
- Capacitorless Dram Device on Silicon-On-Insulator Substrate Application Type: European Patent Office Patent Number: 694291064 Status: Filed on 1-Dec-1994, Issued on 14-Nov-2001, ...
URL: https://www.src.org/library/patent/p0287/
Modified: 2001-11-14 - 25KB Find Similar Documents
- 9:
Capacitorless Dram Device on Silicon-On-Insulator Substrate ...
- Capacitorless Dram Device on Silicon-On-Insulator Substrate Application Type: European Patent Office Patent Number: 0731972 Status: Filed on 1-Dec-1994, Issued on 14-Nov-2001, ...
URL: https://www.src.org/library/patent/p0234/
Modified: 2001-11-14 - 25KB Find Similar Documents
- 10:
High/Low Work Function Metal Alloys for Integrated Circuit Electrodes...
- High/Low Work Function Metal Alloys for Integrated Circuit Electrodes and Methods of Fabricating Same Application Type: Utility Patent Number: 6873020 Country: United States ...
URL: https://www.src.org/library/patent/p0243/
Modified: 2005-03-29 - 22KB Find Similar Documents
- 11:
Systems, Methods and Computer Program Products for Detecting...
- Systems, Methods and Computer Program Products for Detecting the Position of a New Alignment Mark on a Substrate Based on Fitting to Sample Alignment Signals Application Type: ...
URL: https://www.src.org/library/patent/p0047/
Modified: 2000-05-16 - 22KB Find Similar Documents
- 12:
Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...
- Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Divisional Patent Number: 6753567 Country: ...
URL: https://www.src.org/library/patent/p0375/
Modified: 2004-06-22 - 22KB Find Similar Documents
- 13:
Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...
- Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Utility Patent Number: 6531354 Country: ...
URL: https://www.src.org/library/patent/p0194/
Modified: 2003-03-11 - 22KB Find Similar Documents
- 14:
Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit...
- Lanthanum Oxide-Based Gate Dielectrics for Integrated Circuit Field Effect Transistors and Methods of Fabricating Same Application Type: Foreign National Patent Number: NI154861 ...
URL: https://www.src.org/library/patent/p0580/
Modified: 2008-12-01 - 22KB Find Similar Documents
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14 similar documents, best matches first. |
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