Positive Resist Pattern Formation Through Focused Ion Beam Exposure and Surface Barrier Silylation

• Application Type:

  Continuation (in part)

  Patent Number:

  5362606

  Country:

  United States

  Status:

  Filed on 7-Aug-1992, Issued on 8-Nov-1994, Patent Expired

  Organization:

  Massachusetts Institute of Technology

  SRC Filing ID:

  P0060

Inventors

• Mark Hartney (DARPA)
• John Melngailis (MIT)
• David C. Shaver (MIT)