Home » Library » Patents » Patent Information

Low Leakage Asymmetric SRAM Cell Devices

Application Type:

Continuation (in part)

Patent Number:

7307905

Country:

United States

Status:

Filed on 9-Feb-2005, Issued on 11-Dec-2007, Patent Abandoned

Organization:

University of Toronto

SRC Filing ID:

P0530

Inventors

Farid N. Najm (Univ. of Toronto)
Navid Azizi (Univ. of Toronto)
Andreas Moshovos (Univ. of Toronto)

Related Patents

P0310

Application Expired

GRC

Low Leakage Asymmetric SRAM cell, associated novel sense AMP, associated SRAM and cache cell structures and related methods

Navid Azizi (Univ. of Toronto); Andreas Moshovos (Univ. of Toronto); Farid N. Najm (Univ. of Toronto)
Patent Application Expired
Application Type: Provisional

P0403

Application Expired

GRC

Low Leakage Asymmetric Cell SRAM

Navid Azizi (Univ. of Toronto); Andreas Moshovos (Univ. of Toronto); Farid N. Najm (Univ. of Toronto)
Patent Application Expired
Application Type: Patent Cooperation Treaty

P0531

Abandoned Application

GRC

Low Leakage Asymmetric Cell SRAM

Navid Azizi (Univ. of Toronto); Andreas Moshovos (Univ. of Toronto); Farid N. Najm (Univ. of Toronto)
Patent Application Abandoned
Application Type: Foreign National