Semiconductor Device With High on Current and Low Leakage

    • Application Type:
      Utility
      Patent Number:
      7728387
      Country:
      United States
      Status:
      Filed on 12-Jun-2007, Issued on 1-Jun-2010, Patent Abandoned
      Organization:
      Stanford University
      SRC Filing ID:
      P1019

    Inventors

    • Krishna C. Saraswat (Stanford)
    • Tejas Krishnamohan (Intel)

    Related Patents

    P0633
    Application Expired
    FCRP

    Semiconductor Device With High On Current And Low Leakage

    Tejas Krishnamohan (Intel); Krishna C. Saraswat (Stanford)
    Patent Application Expired
    Application Type: Provisional

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