Magnetoelectric Memory Cell with Domain-Wall-Mediated Switching
Inventors
- Kirill Belashchenko (U Nebraska/Lincoln)
- Oleg Tchernyshyov (Johns Hopkins)
- Alexander Kovalev (Moscow State)
Related Patents
Magnetoelectric Memory Cell with Domain-Wall-Mediated Switching
Kirill Belashchenko (U Nebraska/Lincoln); Alexander Kovalev (Moscow State); Oleg Tchernyshyov (Johns Hopkins)Patent Application Expired
Application Type: Provisional