SiC MOSFET Condition Monitoring System and Method

    • Application Type:
      Utility
      Patent Number:
      11397209
      Country:
      United States
      Status:
      Filed on 2-Oct-2020, Issued on 26-Jul-2022
      Organization:
      University of Texas at Dallas
      SRC Filing ID:
      P1860

    Inventors

    • Shi Pu (UT/Dallas)
    • Enes Ugur (UT/Dallas)
    • Fei Yang (UT/Dallas)

    Related Patents

    P1838
    Application Expired
    GRC

    SiC MOSFET Condition Monitoring System and Method

    Shi Pu (UT/Dallas); Enes Ugur (UT/Dallas); Fei Yang (UT/Dallas)
    Patent Application Expired
    Application Type: Provisional

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