Metal Insulator Transitions: the Case of VO(2)

  • Authors:
    Rosa Alejandra Lukaszew (William & Mary)
    Publication ID:
    P063515
    Publication Type:
    Presentation
    Received Date:
    30-May-2012
    Last Edit Date:
    30-May-2012
    Research:
    2115.001 (University of Virginia)

Abstract

Vanadium dioxide (VO(2)) is a paradigm of strongly correlated oxides and shows properties that are still not understood and remain great intellectual challenges. In particular, VO(2) has a metal–semiconductor transition at ~340 K, just above ambient temperature. Across the metal-insulator transition (MIT), the resistivity changes by more than four orders of magnitude and the optical properties are completely modified over a very broad frequency range. The MIT in VO(2) combines the properties of a pure “Mott Hubbard” electronic transition with those of a “Peierls” structural transition. The electronic character of the Mott transition is responsible for the extreme speed of the optical switching that has been recently reported. Understanding this transition and how to control it is a current challenge for both theoretical and experimental condensed matter physics. Discussion will include surface plasmon resonance as a possible means to study as well as to induce the MIT in this material. Interesting applications of this material were presented.

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