Metal Insulator Transitions: the Case of VO(2)

  • Authors:
    Rosa Alejandra Lukaszew (William & Mary)
    Publication ID:
    Publication Type:
    Received Date:
    Last Edit Date:
    2115.001 (University of Virginia)


Vanadium dioxide (VO(2)) is a paradigm of strongly correlated oxides and shows properties that are still not understood and remain great intellectual challenges. In particular, VO(2) has a metal–semiconductor transition at ~340 K, just above ambient temperature. Across the metal-insulator transition (MIT), the resistivity changes by more than four orders of magnitude and the optical properties are completely modified over a very broad frequency range. The MIT in VO(2) combines the properties of a pure “Mott Hubbard” electronic transition with those of a “Peierls” structural transition. The electronic character of the Mott transition is responsible for the extreme speed of the optical switching that has been recently reported. Understanding this transition and how to control it is a current challenge for both theoretical and experimental condensed matter physics. Discussion will include surface plasmon resonance as a possible means to study as well as to induce the MIT in this material. Interesting applications of this material were presented.

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