Field-effect Transistors Based on Two-dimensional Crystal Materials

  • Authors:
    Wan Sik Hwang (Univ. of Notre Dame), Pei Zhao (Univ. of Notre Dame), Sergei Rouvimov (Univ. of Notre Dame), Huili Xing (Univ. of Notre Dame), Alan C. Seabaugh (Univ. of Notre Dame), Wilfried Haensch (IBM), Debdeep Jena (Univ. of Notre Dame)
    Publication ID:
    P066385
    Publication Type:
    Presentation
    Received Date:
    18-Apr-2013
    Last Edit Date:
    18-Apr-2013
    Research:
    1806.005 (University of Notre Dame)
    2383.003 (University of Notre Dame)

Abstract

In summary, in this work, FETs based on MoS2, MoSe2, WS2, WSe2, and MoTe2as well as graphene, particularly, graphene nanoribbon will be discussed and compared as potential channel materials of next generation logic devices.

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