Field-effect Transistors Based on Two-dimensional Crystal Materials

  • Authors:
    Wan Sik Hwang (Univ. of Notre Dame), Pei Zhao (Univ. of Notre Dame), Sergei Rouvimov (Univ. of Notre Dame), Huili Xing (Univ. of Notre Dame), Alan C. Seabaugh (Univ. of Notre Dame), Wilfried Haensch (IBM), Debdeep Jena (Univ. of Notre Dame)
    Publication ID:
    Publication Type:
    Received Date:
    Last Edit Date:
    1806.005 (University of Notre Dame)
    2383.003 (University of Notre Dame)


In summary, in this work, FETs based on MoS2, MoSe2, WS2, WSe2, and MoTe2as well as graphene, particularly, graphene nanoribbon will be discussed and compared as potential channel materials of next generation logic devices.

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