Topological Insulator States in a Broken-gap GaN/InN/GaN Heterojunction

  • Authors:
    Parijat Sengupta (Purdue), Yaohua Tan (Purdue), Tillmann C. Kubis (Purdue), Mykhailo Povolotskyi (Purdue), Gerhard Klimeck (Purdue)
    Publication ID:
    P067729
    Publication Type:
    Presentation
    Received Date:
    26-Aug-2013
    Last Edit Date:
    9-Sep-2013
    Research:
    1806.005 (University of Notre Dame)

Abstract

Topological insulator states are observed in GaN/InN/GaN nano-ribbons. The strong internal polarization field leads to a broken gap heterostructure and satisfies the inverted band criterion. The states are shown to be spin-polarized.

Past Events

  Event Summary
9–10 September 2013
SRC
SRC
TECHCON 2013
Monday, Sept. 9, 2013, 8 a.m. — Tuesday, Sept. 10, 2013, 10 p.m. CT
Austin, TX, United States
Technical conference and networking event for SRC members and students.

4819 Emperor Blvd, Suite 300 Durham, NC 27703 Voice: (919) 941-9400 Fax: (919) 941-9450

Important Information for the SRC website. This site uses cookies to store information on your computer. By continuing to use our site, you consent to our cookies. If you are not happy with the use of these cookies, please review our Cookie Policy to learn how they can be disabled. By disabling cookies, some features of the site will not work.