Topological Insulator States in a Broken-gap GaN/InN/GaN Heterojunction
Topological insulator states are observed in GaN/InN/GaN nano-ribbons. The strong internal polarization field leads to a broken gap heterostructure and satisfies the inverted band criterion. The states are shown to be spin-polarized.
Monday, Sept. 9, 2013, 8 a.m. — Tuesday, Sept. 10, 2013, 10 p.m. CT
Austin, TX, United States
Technical conference and networking event for SRC members and students.