Topological Insulator States in a Broken-gap GaN/InN/GaN Heterojunction

  • Authors:
    Parijat Sengupta (Purdue), Yaohua Tan (Purdue), Tillmann C. Kubis (Purdue), Mykhailo Povolotskyi (Purdue), Gerhard Klimeck (Purdue)
    Publication ID:
    P067729
    Publication Type:
    Presentation
    Received Date:
    26-Aug-2013
    Last Edit Date:
    9-Sep-2013
    Research:
    1806.005 (University of Notre Dame)

Abstract

Topological insulator states are observed in GaN/InN/GaN nano-ribbons. The strong internal polarization field leads to a broken gap heterostructure and satisfies the inverted band criterion. The states are shown to be spin-polarized.

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