Exploring Nano-scale InGaAs and Si FinFETs using Quantum-corrected Semi-classical Ensemble Monte Carlo

  • Authors:
    Dax M. Crum (UT/Austin), Amithraj Valsaraj (UT/Austin), Bhagawan Sahu (GLOBALFOUNDRIES), Zoran Krivokapic (GLOBALFOUNDRIES), Leonard F. Register (UT/Austin), Sanjay K. Banerjee (UT/Austin)
    Publication ID:
    P084413
    Publication Type:
    Paper
    Received Date:
    15-Jun-2015
    Last Edit Date:
    22-Jun-2015
    Research:
    2452.001 (University of Texas/Austin)

Abstract

One potential transistor design space for high-performance operation is nano-scale tri-gate FinFETs using III-V channel materials. FinFETs increase gate control and reduce short-channel effects, while III-V materials provide faster bulk carriers than Si. To explore this design space, we have developed a 3D semi-classical ensemble Monte Carlo simulator, which accommodates complicated band structures and a full-range of scattering processes. Further, we provide innovative quantum corrections to the underlying semi-classical methodology, modeling major consequences of quantum confinement. Moreover, with often highly non-thermal carrier distributions, we go beyond a typical local-Fermi-distribution model for carrier statistics. We model nano-scale FinFETs with channels of In0.53Ga0.47As, which are compared to Si-channel devices, which have slower bulk carriers but also weaker quantum confinement and higher quantum capacitance. We show that in III-V materials, larger bulk thermal velocities do not necessarily translate into better device performance, where degeneracy and quantum confinement can dominate device operation.

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