Exploring Nano-scale InGaAs and Si FinFETs using Quantum-corrected Semi-classical Ensemble Monte Carlo
One potential transistor design space for high-performance operation is nano-scale tri-gate FinFETs using III-V channel materials. FinFETs increase gate control and reduce short-channel effects, while III-V materials provide faster bulk carriers than Si. To explore this design space, we have developed a 3D semi-classical ensemble Monte Carlo simulator, which accommodates complicated band structures and a full-range of scattering processes. Further, we provide innovative quantum corrections to the underlying semi-classical methodology, modeling major consequences of quantum confinement. Moreover, with often highly non-thermal carrier distributions, we go beyond a typical local-Fermi-distribution model for carrier statistics. We model nano-scale FinFETs with channels of In0.53Ga0.47As, which are compared to Si-channel devices, which have slower bulk carriers but also weaker quantum confinement and higher quantum capacitance. We show that in III-V materials, larger bulk thermal velocities do not necessarily translate into better device performance, where degeneracy and quantum confinement can dominate device operation.
Sunday, Sept. 20, 2015, 8 a.m. — Tuesday, Sept. 22, 2015, 10 p.m. CT
Austin, TX, United States
Technical conference and networking event for SRC members and students.