Exploring Nano-scale InGaAs and Si FinFETs using Quantum-corrected Semi-classical Ensemble Monte Carlo

  • Authors:
    Dax M. Crum (UT/Austin), Amithraj Valsaraj (UT/Austin), Bhagawan Sahu (GLOBALFOUNDRIES), Zoran Krivokapic (GLOBALFOUNDRIES), Leonard F. Register (UT/Austin), Sanjay K. Banerjee (UT/Austin)
    Publication ID:
    Publication Type:
    Received Date:
    Last Edit Date:
    2452.001 (University of Texas/Austin)


One potential transistor design space for high-performance operation is nano-scale tri-gate FinFETs using III-V channel materials. FinFETs increase gate control and reduce short-channel effects, while III-V materials provide faster bulk carriers than Si. To explore this design space, we have developed a 3D semi-classical ensemble Monte Carlo simulator, which accommodates complicated band structures and a full-range of scattering processes. Further, we provide innovative quantum corrections to the underlying semi-classical methodology, modeling major consequences of quantum confinement. Moreover, with often highly non-thermal carrier distributions, we go beyond a typical local-Fermi-distribution model for carrier statistics. We model nano-scale FinFETs with channels of In0.53Ga0.47As, which are compared to Si-channel devices, which have slower bulk carriers but also weaker quantum confinement and higher quantum capacitance. We show that in III-V materials, larger bulk thermal velocities do not necessarily translate into better device performance, where degeneracy and quantum confinement can dominate device operation.

Past Events

  Event Summary
20–22 September 2015
Sunday, Sept. 20, 2015, 8 a.m. — Tuesday, Sept. 22, 2015, 10 p.m. CT
Austin, TX, United States
Technical conference and networking event for SRC members and students.

4819 Emperor Blvd, Suite 300 Durham, NC 27703 Voice: (919) 941-9400 Fax: (919) 941-9450

Important Information for the SRC website. This site uses cookies to store information on your computer. By continuing to use our site, you consent to our cookies. If you are not happy with the use of these cookies, please review our Cookie Policy to learn how they can be disabled. By disabling cookies, some features of the site will not work.