Influence of Material Properties on Resonant Tunneling Devices

  • Authors:
    Jacob K. Smith (Elon Univ.), Philip M. Campbell (Georgia Tech), Alexey Tarasov (Georgia Tech), Corey A. Joiner (Georgia Tech), W. Jud Ready (Georgia Tech), Eric M. Vogel (Georgia Tech)
    Publication ID:
    P084742
    Publication Type:
    Poster
    Received Date:
    20-Jul-2015
    Last Edit Date:
    16-Sep-2015
    Research:
    2383.003 (University of Notre Dame)

Abstract

Operation of resonant tunneling devices is defined by negative differential resistance (NDR) in the current-voltage characteristic, which arises due to lateral momentum conservation during tunneling between energetic states in the electrodes. One specific device which has been proposed is the symmetric field-effect transistor (symFET), incorporating 2D materials in place of quantum wells used previously in resonant tunneling devices. A critical parameter in resonant tunneling devices is the peak-to-valley ratio. This work examines how different electrode material parameters, such as band gap and density of states, influence the size and shape of the NDR peak. Additionally, the effect of the barrier properties on the tunneling response of the devices is explored. Optimizing each of these parameters is a critical step towards realizing useful resonant tunneling devices using 2D materials.

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