Evaluating Chromia as a Gate Dielectric

  • Authors:
    Chun Pui Kwan (Univ. at Buffalo), Rui Chen (Univ. at Buffalo), Uttam Singisetti (Univ. at Buffalo), Jonathan Bird (Univ. at Buffalo)
    Publication ID:
    P085469
    Publication Type:
    Presentation
    Received Date:
    5-Sep-2015
    Last Edit Date:
    21-Sep-2015
    Research:
    2398.001 (University of Nebraska/Lincoln)

Abstract

We study electrical conduction in high-quality chromia crystals. A crossover is observed between space-charge limited conduction and the Frenkel-Poole mechanism with increasing temperature, with the crossover occurring in the vicinity of the Neel temperature (308 K) of this material. From an analysis of the Frenkel-Poole conduction, we infer the presence of charge traps that lie approximately 0.5 eV below the conduction-band edge. Our experiments confirm the excellent dielectric properties of chromia, a result that is important for attempts to utilize this material as a "gate" dielectric in future spintronic devices.

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