Report on the Development of ALD Ultrathin High-k on 2D Materials, such as HfO2, LaAlO3, LaLuO3, or LaYO3, using Buried Gate Structure and Eventually Top Gate Structure

  • Authors:
    Peide Ye (Purdue)
    Publication ID:
    P090707
    Publication Type:
    Deliverable Report
    Received Date:
    14-Apr-2017
    Last Edit Date:
    5-May-2017
    Research:
    2656.001 (Purdue University)

Abstract

ZrTe5 bulk crystal is a metallic material and expected to become semiconductor only when the number of the layers is reduced to single-layer or bi-layer. We have tried exfoliation, laser thinning and dry etching methods to reduce the thickness of ZrTe5 with limited success. It leads us to think about another approach by eliminating Zr atoms and to enhance the 1D confinement in 2D planes. We made significant progress in this front and opening the “bandgap” by Zr reduction and eventually realize almost pure Te 2D films. We report this breakthrough work within this project as a very promising step to realize high-mobility 2D TFETs.

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