Fundamental Theory and Numerical Modeling of Filamentary RRAM Device Operation and Reliability
Presentation summary of efforts by the University of Toledo team on modeling RRAM operations and reliability. A thermodynamic description of RRAM is established allowing for operation description in the terms of phase transformations. Three fundamental new findings are: (1) conductive filament is charged and creates strong radial electric field polarizing the matrix; (2) the thermalization time is short (in ps) allowing thermodynamic description; and (3) a minimum of three phases are needed to describe filamentary RRAM operations. Based on the latter points, all the characteristic voltages and currents are given analytical expressions predicting values that are consistent with the data. Another remarkable achievement is that the hour-glass model is not required to describe independence of set voltage of RRAM thickness. These results are verified with COMSOL numerical modeling. Stochastic aspects, such as random telegraph noise and 1/f noise, and correlation coefficients decaying logarithmically with time are described by accounting for double well potentials for some atoms in an amorphous structure. Log-normal statistics of certain quantities is give a fundamental quantitative explanation based on the central limit theorem.
|Logic and Memory Devices Review|
Wednesday, May 24, 2017, 8 a.m.–5 p.m. ET
Cambridge, MA, United States