Reliability and Failure Mechanisms in Integrated Circuits
A charge transport model was developed to predict dielectric breakdown. The main concepts of the model include electron conduction and defect generation. Simulations match experimental data for low-κ SiCOH and high-κ SiN, including I-V, I-t, and TTF-E. The model predicts activation energy for failure will increase as voltage/field decreases, matching experimental data. A dielectric thickness dependence is incorporated into the model, predicting the dielectric strength for low- κ SiCOH planar structure increases ~5% from 20 nm to 10 nm spacing. However, the CT model also predicts TDDB failure variability increases for each shrinking node, with the Weibull shape parameter decreasing ~ ½ its current value if pitch reduces by ~ ½, for current lithography techniques. The model was expanded to 2D to predict field/current for various geometries, including air gap and line-edge-roughness. Voltage ramp tests were conducted on silicon nitride planar films, and an activation energy of 0.12 eV was calculated, while no strong area dependence was observed.
|Nanomanufacturing Materials and Processes (NMP) Review|
Tuesday, June 27, 2017, 8 a.m. — Wednesday, June 28, 2017, 5 p.m. PT
Stanford, CA, United States