Reliability and Failure Mechanisms in Integrated Circuits

  • Authors:
    Sean P. Ogden (RPI), Yueming Xu (RPI), Toh-Ming Lu (RPI), Joel Plawsky (RPI)
    Publication ID:
    P091143
    Publication Type:
    Annual Review
    Received Date:
    21-Jun-2017
    Last Edit Date:
    29-Jun-2017
    Research:
    2672.001 (Rensselaer Polytechnic Institute)

Abstract

A charge transport model was developed to predict dielectric breakdown. The main concepts of the model include electron conduction and defect generation. Simulations match experimental data for low-κ SiCOH and high-κ SiN, including I-V, I-t, and TTF-E. The model predicts activation energy for failure will increase as voltage/field decreases, matching experimental data. A dielectric thickness dependence is incorporated into the model, predicting the dielectric strength for low- κ SiCOH planar structure increases ~5% from 20 nm to 10 nm spacing. However, the CT model also predicts TDDB failure variability increases for each shrinking node, with the Weibull shape parameter decreasing ~ ½ its current value if pitch reduces by ~ ½, for current lithography techniques. The model was expanded to 2D to predict field/current for various geometries, including air gap and line-edge-roughness. Voltage ramp tests were conducted on silicon nitride planar films, and an activation energy of 0.12 eV was calculated, while no strong area dependence was observed.

Past Events

  Event Summary
27–28 June 2017
GRC
GRC
Nanomanufacturing Materials and Processes (NMP) Review
Tuesday, June 27, 2017, 8 a.m. — Wednesday, June 28, 2017, 5 p.m. PT
Stanford, CA, United States

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