Report on Assessment of Vapor Etchants

  • Authors:
    Dara Bobb-Semple (Stanford), Fatemeh Sadat Minaye Hashemi (Stanford), Stacey F. Bent (Stanford)
    Publication ID:
    P091208
    Publication Type:
    Deliverable Report
    Received Date:
    29-Jun-2017
    Last Edit Date:
    24-Jul-2017
    Research:
    2660.001 (Stanford University)

Research Report Highlight

This report describes work done to explore the etching capabilities of ethanol in the vapor phase. Cu/SiO2 metal-dielectric patterned substrates are used and an alkylphosphonic acid self-assembled monolayer (SAM) is used to block the Cu surface.

Abstract

This research focuses on developing a self-correcting method for area selective atomic layer deposition (AS-ALD), with the ultimate aim to generate a vapor-based process in which defects that arise during AS-ALD can be removed by a vapor etch step. This report describes work done to explore the etching capabilities of ethanol in the vapor phase. This process can be used to increase the selectivity achieved in AS-ALD by serving as a tool for defect removal. In this study, Cu/SiO2 metal-dielectric patterned substrates are used and an alkylphosphonic acid self-assembled monolayer (SAM) is used to block the Cu surface. The goal is to remove defects that form on the SAM during the ALD process on the metal regions of the substrate. This can be accomplished by using an etchant to remove the surface oxide underlying the SAM, thereby lifting the defects and the SAM from the surface simultaneously. It is demonstrated that vapor ethanol can etch the copper oxides (CuOx) at temperatures as low as 150°C; however, only partial removal of a SAM layer on CuOx is observed under similar conditions. Further experiments are planned.

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