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215 similar documents, best matches first. |
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- 1:
Graphene Field Effect Transistor (Patent P1379) - SRC
- Graphene Field Effect Transistor Application Type: Utility Patent Number: 9748340 Country: United States Status: Filed on 22-Mar-2012, Issued on 29-Aug-2017 Organization: ...
URL: https://www.src.org/library/patent/p1379/
Modified: 2017-08-29 - 24KB Find Similar Documents
- 2:
Direct Growth of Graphene by Molecular Beam Epitaxy for the Formation...
- Direct Growth of Graphene by Molecular Beam Epitaxy for the Formation of Graphene Heterostructures Application Type: Patent Cooperation Treaty Patent Number: PCT/US12/46621 Status: ...
URL: https://www.src.org/library/patent/p1382/
Modified: 2015-07-07 - 24KB Find Similar Documents
- 3:
Direct Graphene Growth on Metal Oxides by Molecular Epitaxy ...
- Direct Graphene Growth on Metal Oxides by Molecular Epitaxy Application Type: Utility Patent Number: 9624600 Country: United States Status: Filed on 6-Dec-2012, Issued on ...
URL: https://www.src.org/library/patent/p1387/
Modified: 2017-04-18 - 23KB Find Similar Documents
- 4:
Magneto-Electric Voltage Controlled Spin Transistors (Patent...
- Magneto-Electric Voltage Controlled Spin Transistors Application Type: Utility Patent Number: 9379232 Country: United States Status: Filed on 18-Feb-2014, Issued on 28-Jun-2016 ...
URL: https://www.src.org/library/patent/p1469/
Modified: 2016-06-28 - 27KB Find Similar Documents
- 5:
Graphene Formation on Dielectrics and Electronic Devices formed...
- Graphene Formation on Dielectrics and Electronic Devices formed Therefrom Application Type: Patent Cooperation Treaty Patent Number: PCT/US2011/066 Status: Filed on 21-Dec-2011, ...
URL: https://www.src.org/library/patent/p1370/
Modified: 2013-09-06 - 24KB Find Similar Documents
- 6:
Graphene Formation on Dielectrics and Electronic Devices Formed...
- Graphene Formation on Dielectrics and Electronic Devices Formed Therefrom Application Type: Utility Patent Number: 8685802 Country: United States Status: Filed on 29-Dec-2010, ...
URL: https://www.src.org/library/patent/p1264/
Modified: 2014-04-01 - 25KB Find Similar Documents
- 7:
NMS Nanoengineered Materials Annual Review (Event E004780) -...
- NMS Nanoengineered Materials Annual Review Date: Tuesday, June 12, 2012 - Wednesday, June 13, 2012 Location: Dean's Suite 290, College of Business, 1307 West Highland St., ...
URL: https://www.src.org/calendar/e004780/
Modified: 2012-12-13 - 57KB Find Similar Documents
- 8:
NMS Patterning Review Agenda
- NMS Patterning Review Agenda Date: Tuesday, October 4, 2011 - Thursday, October 6, 2011 Location: The Solution Center, Durham, NC 27703 Tuesday, October 4, 2011 7:30 - 8:30 a.m. ...
URL: https://www.src.org/calendar/e004187/e004187-agenda.pdf
Modified: 2011-09-22 - 44KB Find Similar Documents
- 9:
2007 GRC compelling research reasons - SRC
- 2007 GRC Compelling Research Reasons Advanced Micro Devices, Inc. next company Newly Recognized ID Science Areas Title PI Start Date 1241 Computer Aided Design & Test Sciences A ...
URL: https://www.src.org/...ive/2007/compelling-research-reasons/
Modified: 2010-06-26 - 167KB Find Similar Documents
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GRAPHENE/(MULTILAYER) BORON NITRIDE HETEROEPITAXY FOR ELECTRONIC...
- GRAPHENE/(MULTILAYER) BORON NITRIDE HETEROEPITAXY FOR ELECTRONIC DEVICE APPLICATIONS Application Type: Divisional Patent Number: 8338825 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p1311/
Modified: 2012-12-25 - 24KB Find Similar Documents
- 11:
Methods of Forming Graphene/(Multilayer) Boron Nitride for Electronic...
- Methods of Forming Graphene/(Multilayer) Boron Nitride for Electronic Device Applications Application Type: Utility Patent Number: 8158200 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p1170/
Modified: 2012-04-17 - 24KB Find Similar Documents
- 12:
Graphene (Multiplayer) Boron Niride Heteroepitaxy for Electronic...
- Graphene (Multiplayer) Boron Niride Heteroepitaxy for Electronic Device Applications Application Type: Continuation Patent Number: 8946692 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p1500/
Modified: 2015-02-03 - 24KB Find Similar Documents
- 13:
Synthesis and Characterization of First Row Transition Metal...
- Synthesis and Characterization of First Row Transition Metal Complexes Containing a-Imino Alkoxide as Precursors for Deposition of Metal Films Application Type: Utility Patent ...
URL: https://www.src.org/library/patent/p1373/
Modified: 2017-09-12 - 22KB Find Similar Documents
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Synthesis and Characterization of First Row Transition Metal...
- Synthesis and Characterization of First Row Transition Metal Complexes Containing Alpha-Keto Hydrazonate Ligands as Potential Precursors for Use in Metal Film Deposition ...
URL: https://www.src.org/library/patent/p1356/
Modified: 2015-12-09 - 22KB Find Similar Documents
- 15:
2005 GRC Compelling Research Report - SRC
- 2005 GRC Compelling Research Reasons Advanced Micro Devices, Inc. next company Newly Recognized ID Science Areas Title PI Start Date 658 Nanostructure & Integration Sciences Role ...
URL: https://www.src.org/...ive/2005/compelling-research-reasons/
Modified: 2010-06-26 - 189KB Find Similar Documents
- 16:
2006 GRC compelling research reasons - SRC
- 2006 GRC Compelling Research Reasons Advanced Micro Devices, Inc. next company Newly Recognized ID Science Areas Title PI Start Date 1190 Integrated Circuit & Systems Sciences ...
URL: https://www.src.org/...ive/2006/compelling-research-reasons/
Modified: 2010-06-26 - 200KB Find Similar Documents
- 17:
Conductors Created by Metal Deposition Using Selective Passivation...
- Conductors Created by Metal Deposition Using Selective Passivation Layer and Related Methods Application Type: Utility Patent Number: 7534967 Country: United States Status: Filed ...
URL: https://www.src.org/library/patent/p0447/
Modified: 2009-05-19 - 23KB Find Similar Documents
- 18:
Films for Use in Microelectronic Devices and Methods of Producing...
- Films for Use in Microelectronic Devices and Methods of Producing Same Application Type: Utility Patent Number: 6306495 Country: United States Status: Filed on 27-Jul-2000, Issued ...
URL: https://www.src.org/library/patent/p0156/
Modified: 2001-10-23 - 22KB Find Similar Documents
- 19:
Films for Use in Microelectronic Devices and Methods of Producing...
- Films for Use in Microelectronic Devices and Methods of Producing Same Application Type: Utility Patent Number: 6114032 Country: United States Status: Filed on 10-Apr-1998, Issued ...
URL: https://www.src.org/library/patent/p0155/
Modified: 2000-09-05 - 22KB Find Similar Documents
- 20:
Wafer Fabrication Monitoring/Control System and Method (Patent...
- Wafer Fabrication Monitoring/Control System and Method Application Type: Utility Patent Number: 9366601 Country: United States Status: Filed on 15-Mar-2012, Issued on 14-Jun-2016 ...
URL: https://www.src.org/library/patent/p1332/
Modified: 2016-06-14 - 23KB Find Similar Documents
- 21:
The Value of Members
- 2009 Annual Report industry faculty collaboration research application government leverage innovation mentors universities academic excellence fellowships competition invention ...
URL: https://www.src.org/about/corporate-annual/2009.pdf
Modified: 2010-06-21 - 6.5MB Find Similar Documents
- 22:
Surface Modifcation of CVD Polymer Films (Patent P0591) - SRC
- Surface Modifcation of CVD Polymer Films Application Type: Utility Patent Number: 7501154 Country: United States Status: Filed on 18-Feb-2005, Issued on 10-Mar-2009 Organization: ...
URL: https://www.src.org/library/patent/p0591/
Modified: 2009-03-10 - 22KB Find Similar Documents
- 23:
NMS Newsletters - October 2012
- Nanomanufacturing Sciences October 2012 - Monthly Newsletter Dr. Robert Havemann, NMS Director Dr. Boyan Boyanov, Nanoengineered Materials Thrust Director Dr. Shawna Liff, ...
URL: https://www.src.org/...m/grc/nms/newsletter/october-2012.pdf
Modified: 2012-10-09 - 75KB Find Similar Documents
- 24:
TECHCON 2014 (Event E004684) - SRC
- TECHCON 2014 Date: Sunday, Sept. 7, 2014, 2 p.m. - Tuesday, Sept. 9, 2014, 10 p.m. CT Location: Renaissance Austin Hotel, Austin, TX, United States Event ID: E004684 E004684 image ...
URL: https://www.src.org/calendar/e004684/
Modified: 2015-03-09 - 158KB Find Similar Documents
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TECHCON 2016 (Event E005107) - SRC
- TECHCON 2016 Date: Sunday, Sept. 11, 2016, 8 a.m. - Tuesday, Sept. 13, 2016, 10 p.m. CT Location: Renaissance Austin Hotel, Austin, TX, United States Event ID: E005107 Thank you to ...
URL: https://www.src.org/calendar/e005107/
Modified: 2017-03-13 - 163KB Find Similar Documents
- 26:
SRC 2000 Annual Report
- There are few living men whose insights and professional accomplishments have changed the world. Jack Kilby is one of these men. His invention of the integrated circuit - the ...
URL: https://www.src.org/about/corporate-annual/2000.pdf
Modified: 2010-06-21 - 968KB Find Similar Documents
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2008 GRC compelling research reasons - SRC
- 2008 GRC Compelling Research Reasons Advanced Micro Devices, Inc. next company Newly Recognized ID Science Areas Title PI Start Date 1292 Interconnect & Packaging Sciences The New ...
URL: https://www.src.org/...ive/2008/compelling-research-reasons/
Modified: 2010-06-26 - 188KB Find Similar Documents
- 28:
2001 SRC Corporate Annual Report: Pioneers in Collaborative...
- The 2001 SRC Annual Report, including financial results, is available online at: www.src.org/member/about/arch/annual01.pdf 2001 A An nn nu ua al l R Re ep po or rt t P I O N E E R ...
URL: https://www.src.org/about/corporate-annual/2001.pdf
Modified: 2010-06-21 - 1.0MB Find Similar Documents
- 29:
COOPERATIVE RESEARCH The New Paradigm
- COOPERATIVE RESEARCH The New Paradigm Semiconductor Research Corporation ROBERT M. BURGER i FOREWORD Springing from the invention of the transistor in 1947 and the integrated ...
URL: https://www.src.org/about/p001960.pdf
Modified: 2012-08-13 - 660KB Find Similar Documents
- 30:
Table
- 1 2 Table of Contents B. Executive Summary ...... 3 C. Description of ...
URL: https://www.src.org/ncore_newlimits_112617_final.pdf
Modified: 2017-11-27 - 23.1MB Find Similar Documents
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