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GRC Science Area
PID – Process Integration & Device Sciences
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1 through 18 of
18 similar documents, best matches first. |
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- 1:
Semiconductor Research Corporation - SRC
- GRC GRC Global Research Collaboration Our motivation is to fund the most relevant and critical research for international companies, so we go where the best university talent ...
URL: https://www.src.org/program/grc/
Modified: 2023-10-10 - 33KB Find Similar Documents
- 2:
Selective Germanium Deposition on Silicon and Resulting Structures...
- Selective Germanium Deposition on Silicon and Resulting Structures Application Type: Utility Patent Number: 5162246 Country: United States Status: Filed on 8-Nov-1991, Issued on ...
URL: https://www.src.org/library/patent/p0146/
Modified: 1992-11-10 - 22KB Find Similar Documents
- 3:
Selective Germanium Deposition on Silicon and Resulting Structures...
- Selective Germanium Deposition on Silicon and Resulting Structures Application Type: Utility Patent Number: 5089872 Country: United States Status: Filed on 27-Apr-1990, Issued on ...
URL: https://www.src.org/library/patent/p0101/
Modified: 1992-02-18 - 22KB Find Similar Documents
- 4:
Germanium Silicon Dioxide Gate MOSFET (Patent P0098) - SRC
- Germanium Silicon Dioxide Gate MOSFET Application Type: Utility Patent Number: 5101247 Country: United States Status: Filed on 27-Apr-1990, Issued on 31-Mar-1992, Patent Expired ...
URL: https://www.src.org/library/patent/p0098/
Modified: 1992-03-31 - 22KB Find Similar Documents
- 5:
Deposition of Germanium Thin Films on Silicon Dioxide Employing...
- Deposition of Germanium Thin Films on Silicon Dioxide Employing Interposed Polysilicon Layer Application Type: Divisional Patent Number: 5250452 Country: United States Status: ...
URL: https://www.src.org/library/patent/p0082/
Modified: 1993-10-05 - 22KB Find Similar Documents
- 6:
Selective Deposition of Doped Silicon-Germanium Alloy on Semiconductor...
- Selective Deposition of Doped Silicon-Germanium Alloy on Semiconductor Substrate, and Resulting Structures Application Type: Divisional Patent Number: 5336903 Country: United ...
URL: https://www.src.org/library/patent/p0063/
Modified: 1994-08-09 - 22KB Find Similar Documents
- 7:
Digitally Self-Calibrating pipeline Analog-to-Digital Converter...
- Digitally Self-Calibrating pipeline Analog-to-Digital Converter Application Type: Utility Patent Number: 5499027 Country: United States Status: Filed on 24-Feb-1994, Issued on ...
URL: https://www.src.org/library/patent/p0024/
Modified: 1996-03-12 - 22KB Find Similar Documents
- 8:
Cyclic Thermal Anneal for Dislocation Reduction (Patent P0334...
- Cyclic Thermal Anneal for Dislocation Reduction Application Type: Foreign National Patent Number: 139204 Country: Taiwan Status: Filed on 26-Jun-2000, Issued on 17-Dec-2001 ...
URL: https://www.src.org/library/patent/p0334/
Modified: 2001-12-17 - 23KB Find Similar Documents
- 9:
Oxidation of silicon on germanium (Patent P0250) - SRC
- Oxidation of silicon on germanium Application Type: Utility Patent Number: 6352942 Country: United States Status: Filed on 25-Jun-1999, Issued on 5-Mar-2002, Patent Abandoned ...
URL: https://www.src.org/library/patent/p0250/
Modified: 2002-03-05 - 23KB Find Similar Documents
- 10:
Cyclic Anneal for Dislocation Reduction (Patent P0255) - SRC
- Cyclic Anneal for Dislocation Reduction Application Type: Utility Patent Number: 6635110 Country: United States Status: Filed on 23-Jun-2000, Issued on 21-Oct-2003 Organization: ...
URL: https://www.src.org/library/patent/p0255/
Modified: 2003-10-21 - 23KB Find Similar Documents
- 11:
Cyclic Thermal Anneal for Dislocation Reduction (Patent P0335...
- Cyclic Thermal Anneal for Dislocation Reduction Application Type: European Patent Office Patent Number: 1192646 Status: Filed on 23-Jun-2000, Issued on 13-Aug-2008 Organization: ...
URL: https://www.src.org/library/patent/p0335/
Modified: 2008-08-13 - 23KB Find Similar Documents
- 12:
Oxidation of silicon on germanium (Patent P0330) - SRC
- Oxidation of silicon on germanium Application Type: Foreign National Patent Number: 154359 Country: Taiwan Status: Filed on 26-Jun-2000, Issued on 15-Aug-2002, Patent Abandoned ...
URL: https://www.src.org/library/patent/p0330/
Modified: 2002-08-15 - 23KB Find Similar Documents
- 13:
Electrostatically-Actuated Structures for Fluid Property Measurements...
- Electrostatically-Actuated Structures for Fluid Property Measurements and Related Methods Application Type: Utility Patent Number: 5955659 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0053/
Modified: 1999-09-21 - 29KB Find Similar Documents
- 14:
Methods of Forming Features of Integrated Circuits Using Modified...
- Methods of Forming Features of Integrated Circuits Using Modified Buried Layers and Integrated Circuits Having Features so Formed Application Type: Utility Patent Number: 6346446 ...
URL: https://www.src.org/library/patent/p0190/
Modified: 2002-02-12 - 22KB Find Similar Documents
- 15:
Methods of Forming Polycrystalline Semiconductor Waveguides of...
- Methods of Forming Polycrystalline Semiconductor Waveguides of Optoelectronic Integrated Circuits, and Devises Formed Thereby Application Type: Utility Patent Number: 5841931 ...
URL: https://www.src.org/library/patent/p0051/
Modified: 1998-11-24 - 25KB Find Similar Documents
- 16:
Optoelectronic Integrated Circuits Having Polycrystalline Silicon...
- Optoelectronic Integrated Circuits Having Polycrystalline Silicon Waveguides Therein Application Type: Divisional Patent Number: 6108464 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0094/
Modified: 2000-08-22 - 26KB Find Similar Documents
- 17:
Floating Gate Transistor Having Buried Strained Silicon Germanium...
- Floating Gate Transistor Having Buried Strained Silicon Germanium Channel Layer Application Type: Utility Patent Number: 6313486 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0092/
Modified: 2001-11-06 - 23KB Find Similar Documents
- 18:
Vertical Channel Floating Gate Transistor Having Silicon Germanium...
- Vertical Channel Floating Gate Transistor Having Silicon Germanium Channel Layer Application Type: Utility Patent Number: 6313487 Country: United States Status: Filed on ...
URL: https://www.src.org/library/patent/p0091/
Modified: 2001-11-06 - 22KB Find Similar Documents
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18 similar documents, best matches first. |
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