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C2S2 32
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CD – Circuit Design 34
AMS-CSD – Analog/Mixed-Signal Ci... 22
SLD – System Level Design 22
I3T – Innovative and Intelligent... 21
Advanced Devices & Technologies 15
Factory Systems 15
ASCENT-T1 – Vertical CMOS 12
PKG – Packaging 11
ISD – Integrated System Design 10
NEM – Nanoengineered Materials 10
BEP – Back End Processes 9
CRISP-T1 – Hardware Support for ... 9
ASCENT-T2 – Beyond CMOS 8
CADT – Computer-Aided Design and... 8
ADS – Alternative Device Structu... 7
Back End Processes 7
HWS – Hardware Security 7
LPD – Logic & Physical Design 7
NMP – Nanomanufacturing Material... 7
AMML-T1 – Antiferromagnetic Magn... 6
Doping Technologies 6
PAT – Patterning 6
TT – Test & Testability 6
CONIX-T1 – ARENA Integrator 5
PatMat – Patterning Materials 5
CBRIC-T2 – Neuromorphic Fabrics 4
ESH – Environment Safety and Hea... 4
IMPACT-T1 – Materials for Scaled... 4
ADA-T1 – Deft Development 3
DCMOS – Digital CMOS Technologie... 3
DEEP3M-T4 – Architectures 3
TechCAD – Technology CAD 3
CBRIC-T1 – Neuro-inspired Algori... 2
CRISP-T3 – Scaling Applications ... 2
ComSenTer-T1 – Systems and Algor... 2
DesSyn – Design Synthesis 2
DesTech – Design Techniques 2
Modeling & Simulation 2
NEWLIMITS-T2 – 2D Materials Devi... 2
Packaging & Interconnect Systems 2
Pat(MPS) – Patterning 2
ASCENT-T4 – Merged Logic Memory ... 1
CAPSL-T4 – Architectures and Sys... 1
CM – Compact Modeling 1
ComSenTer-T2 – mm-wave/THz ICs a... 1
ComSenTer-T3 – Application-speci... 1
DEEP3M-T2 – Circuits 1
Deposition 1
E2CDA2 – E2CDA 2.0 1
Front End Processes 1
IMPACT-T2 – Materials for Storag... 1
Materials 1
NEWLIMITS-T1 – Novel Computing a... 1
NEWLIMITS-T3 – Advanced Manufact... 1
NEWLIMITS-T4 – Characterization ... 1
SMART-T1 – Spin-orbit Torque Mat... 1
GRC Science Area
ICSS – Integrated Circuit & Syst... 49
MPS – Material & Process Science... 47
NMS – Nanomanufacturing Sciences 31
NIS – Nanostructure & Integratio... 29
CADTS – Computer Aided Design & ... 24
IPS – Interconnect & Packaging S... 20
PID – Process Integration & Devi... 17
MBP – Materials & Bulk Processes... 15
MIC – Microstructure Sciences 15
DS – Device Sciences 11
LIT – Lithography Sciences 9
DES – Design Sciences 8
INT – Interconnect Sciences 5
ES-H – Environmental Safety & He... 3
MFGPS – Manufacturing Process Sc... 2
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1: Mismatch Detection Using Periodic Structures (Patent P1995) ...
Mismatch Detection Using Periodic Structures Application Type: Utility Country: United States Status: Filed on 30-Sep-2021, Published by Patent Office Organization: Arizona State ...
URL: https://www.src.org/library/patent/p1995/
Modified: 2021-09-30 - 22KB
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2: DYNAMIC-ZOOM ANALOG TO DIGITAL CONVERTER (ADC) HAVING A COARSE...
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URL: https://www.src.org/library/patent/p1782/
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3: Synthesis and Characterization of First Row Transition Metal...
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4: Synthesis and Characterization of First Row Transition Metal...
Synthesis and Characterization of First Row Transition Metal Complexes Containing Alpha-Keto Hydrazonate Ligands as Potential Precursors for Use in Metal Film Deposition ...
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5: Cost Effective DAC Linearization System (Patent P1749) - SRC
Cost Effective DAC Linearization System Application Type: Utility Patent Number: 10218371 Country: United States Status: Filed on 1-Mar-2018, Issued on 26-Feb-2019 Organization: ...
URL: https://www.src.org/library/patent/p1749/
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URL: https://www.src.org/library/patent/p1736/
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URL: https://www.src.org/library/patent/p1751/
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URL: https://www.src.org/library/patent/p2082/
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10: Topological Insulator-Based Field-Effect Transistor (Patent P1271...
Topological Insulator-Based Field-Effect Transistor Application Type: Utility Patent Number: 8629427 Country: United States Status: Filed on 29-Apr-2011, Issued on 14-Jan-2014, ...
URL: https://www.src.org/library/patent/p1271/
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11: Two-terminal Spintronic Devices (Patent P1658) - SRC
Two-terminal Spintronic Devices Application Type: Utility Patent Number: 10283561 Country: United States Status: Filed on 12-Dec-2017, Issued on 7-May-2019 Organization: University ...
URL: https://www.src.org/library/patent/p1658/
Modified: 2019-05-07 - 29KB
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12: Two-Terminal Spintronic Devices (Patent P1817) - SRC
Two-Terminal Spintronic Devices Application Type: Continuation Patent Number: 10529775 Country: United States Status: Filed on 4-Apr-2019, Issued on 7-Jan-2020 Organization: ...
URL: https://www.src.org/library/patent/p1817/
Modified: 2020-01-07 - 29KB
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13: Incorporating Gate Control over a Resonant Tunneling Structure...
Incorporating Gate Control over a Resonant Tunneling Structure in CMOS to Reduce off-State Current Leakage, Supply Voltage and Power Consumption Application Type: Utility Patent ...
URL: https://www.src.org/library/patent/p1098/
Modified: 2011-08-30 - 23KB
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14: Non-Crystalline Oxides for Use in Microelectronic, Optical and...
Non-Crystalline Oxides for Use in Microelectronic, Optical and Other Applications Application Type: Foreign National Patent Number: 195870 Country: Taiwan Status: Filed on ...
URL: https://www.src.org/library/patent/p0227/
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15: Novel Non-Crystalline Oxides for Use in Microelectronic, Optical...
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URL: https://www.src.org/library/patent/p0225/
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16: Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use...
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URL: https://www.src.org/library/patent/p0095/
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17: Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use...
Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use in Gate Dielectrics and Methods of Making the Same Application Type: Foreign National Patent Number: NI180834 ...
URL: https://www.src.org/library/patent/p0220/
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18: Binary Non-Crystalline Oxide Analogs of Silicon Dioxide for Use...
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URL: https://www.src.org/library/patent/p0374/
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1 through 30 of 588 similar documents, best matches first.   
Results by:Thunderstone Page: 1 2 3 4 5 6 7 8 9 10 next >>