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In-situ Studies of III-V Surfaces and High-k Atomic Layer Deposition...
- In-situ Studies of III-V Surfaces and High-k Atomic Layer Deposition Date: Tuesday, Oct. 23, 2012, 4 p.m.-5:30 p.m. ET Location: via web conference, Research Triangle Park, NC, ...
URL: https://www.src.org/calendar/e004519/
Modified: 2013-04-23 - 32KB Find Similar Documents
- 2:
PowerPoint Presentation
- RTI International High Performance Processing Systems Enabled by 3D Integration Bob Conn May 5, 2011 1 Bob Conn, RTI International, rconn@rti.org, bobconn@ieee.org RTI ...
URL: https://www.src.org/calendar/e004357/03-conn.pdf
Modified: 2011-05-04 - 1.1MB Find Similar Documents
- 3:
Presentation Title
- PAGE 1 QUALCOMM CONFIDENTIAL AND PROPRIETARY QUALCOMM CONFIDENTIAL AND PROPRIETARY qctconnect.com 3D Through Si Stacking Technology - an IFM Perspective - RikoR May 11 PAGE 2 ...
URL: https://www.src.org/calendar/e004357/02-radojcic.pdf
Modified: 2011-05-04 - 2.4MB Find Similar Documents
- 4:
Past
- PAST FCRP workshop - M Mayberry, May 2012 Source: SRC website, Feb 2011 FCRP workshop - M Mayberry, May 2012 system software systems systems structures structures materials ...
URL: https://www.src.org/calendar/e004827/mayberry.pdf
Modified: 2012-05-16 - 3.4MB Find Similar Documents
- 5:
High-Performance Gate Oxides such as for Graphene Field-Effect...
- High-Performance Gate Oxides such as for Graphene Field-Effect Transistors or Carbon Nanotubes Application Type: Utility Patent Number: 8445893 Country: United States Status: Filed ...
URL: https://www.src.org/library/patent/p1209/
Modified: 2013-05-21 - 24KB Find Similar Documents
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Graphene Device Including a PVA Layer or Formed Using a PVA Layer...
- Graphene Device Including a PVA Layer or Formed Using a PVA Layer Application Type: Continuation Patent Number: 8735209 Country: United States Status: Filed on 15-Mar-2013, Issued ...
URL: https://www.src.org/library/patent/p1404/
Modified: 2014-05-27 - 24KB Find Similar Documents
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3D IMAPS
- Tezzaron Semiconductor 05/05/2011 SRC 3D Summit Bob Patti, CTO rpatti@tezzaron.com 1 Tezzaron Semiconductor 05/05/2011 Why We Scale? 2 >180nm 90nm 65nm 130nm 45nm 28nm 22nm 16nm ...
URL: https://www.src.org/calendar/e004357/04-patti.pdf
Modified: 2011-05-04 - 4.4MB Find Similar Documents
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3D IC University Research e-Workshop (Event E004357) - SRC
- 3D IC University Research e-Workshop Date: Thursday, May 5, 2011, noon-4:30 p.m. ET Location: SRC Conference Room D; via web conference, Research Triangle Park, NC, United States ...
URL: https://www.src.org/calendar/e004357/
Modified: 2011-11-05 - 43KB Find Similar Documents
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