Viewing 316 - 330 of 553
Selective Deposition of Doped Silicon-Germanium Alloy on Semiconductor Substrate
Stanton P. Ashburn (NC State); Douglas Grider (NC State); Mehmet Ozturk (NC State); Mahesh Sanganeria (NC State)Patent Expired
Application Type: Utility
Selective Deposition of Doped Silicon-Germanium Alloy on Semiconductor Substrate, and Resulting Structures
Stanton P. Ashburn (NC State); Douglas Grider (NC State); Mehmet Ozturk (NC State); Mahesh Sanganeria (NC State); Jimmie J. Wortman (NC State)Patent Expired
Application Type: Divisional
Selective Deposition of Tungsten on TISI2
Leslie Allen (Cornell); James W. Mayer (Cornell); David Stanasolovich (Cornell)Patent Expired
Application Type: Utility
Selective Deposition of Tungsten on TISI2
Leslie Allen (UIUC); James W. Mayer (Cornell); David Stanasolovich (Cornell)Patent Expired
Application Type: Utility
Selective Germanium Deposition on Silicon and Resulting Structures
Douglas Grider (NC State); Mehmet Ozturk (NC State); Jimmie J. Wortman (NC State)Patent Expired
Application Type: Utility
Selective Germanium Deposition on Silicon and Resulting Structures
Douglas Grider (NC State); Mehmet Ozturk (NC State); Jimmie J. Wortman (NC State)Patent Expired
Application Type: Utility
Self-aligned Integrated Circuit Bipolar Transistor having Monocrystalline Contacts
Jack L. Glenn (Purdue); Gerold W. Neudeck (Purdue)Patent Expired
Application Type: Utility
Self-Aligned Integrated Circuit Bipolar Transistor having Monocrystalline Contacts
Jack L. Glenn (Purdue); Gerold W. Neudeck (Purdue)Patent Expired
Application Type: Utility
Self-Timing Integrated Circuits Having Low Clock Signal during Inactive Periods
Wojciech Maly (Carnegie Mellon Univ.)Patent Expired
Application Type: Utility
Semiconductor-On-Insulator Electronic Devices Having Trench Isolated Monocrystalline Active Regions
Gerold W. Neudeck (Purdue); Chitra K. Subramanian (Purdue)Patent Expired
Application Type: Utility
Silicon-On-Insulator Transistors Having Improved Current Characteristics and Reduced Electrostatic Discharge Susceptibility
Mansun J. Chan (UC/Berkeley); Chenming Hu (UC/Berkeley); Ping K. Ko (UC/Berkeley); Clement H. Wann (UC/Berkeley)Patent Expired
Application Type: Utility
Silicon-on-Insulator Transistors Having Improved Current Characteristics and Reduced Electrostatic Discharge Susceptibility
Mansun J. Chan (UC/Berkeley); Chenming Hu (UC/Berkeley); Ping K. Ko (UC/Berkeley); Clement H. Wann (UC/Berkeley)Patent Expired
Application Type: Utility
Simple CD Measurement of Periodic Structures on Photomasks
Kirt C. Hickman (Univ. of New Mexico); John R. McNeil (Univ. of New Mexico); Syed Sohail Hu Naqvi (Univ. of New Mexico)Patent Expired
Application Type: Utility
Source Contact Placement for Efficient ESD/EOS Protection in Grounded Substrate MOS Integrated Circuit
Carlos H. Diaz (UIUC); Charvaka Duvvury (TI); Steve S.M. Kang (UIUC)Patent Expired
Application Type: Utility
Static RAM Memory Cell Using N-Channel MOS Transistors
Wojciech Maly (Carnegie Mellon Univ.); Pranab K. Nag (Carnegie Mellon Univ.)Patent Expired
Application Type: Utility