III-N Heterojunction nanowire tunneling field effect transistors
Inventors
- Patrick Fay (Univ. of Notre Dame)
- Wenjun Li (Univ. of Notre Dame)
- Debdeep Jena (Univ. of Notre Dame)
Related Patents
GROUP III-NITRIDE COMPOUND HETEROJUNCTION TUNNEL FIELD-EFFECT TRANSISTORS AND METHODS FOR MAKING THE SAME
Patrick Fay (Univ. of Notre Dame); Debdeep Jena (Univ. of Notre Dame); Wenjun Li (Univ. of Notre Dame)Patent Issued (on 27-Feb-2018)
Application Type: Utility