Methods of Measuring Real-Time Junction Temperature in Silicon Carbide Power MOSFET Devices using Turn-on Delay, Related Circuits, and Computer Program Products

• Application Type:

  Utility

  Patent Number:

  11525740

  Country:

  United States

  Status:

  Filed on 23-Jun-2020, Issued on 13-Dec-2022

  Organization:

  University of Texas at Dallas

  SRC Filing ID:

  P1917

Inventors

• Bilal Akin (UT/Dallas)
• Fei Yang (UT/Dallas)
• Shi Pu (UT/Dallas)
• Bhanu Teja Vankayalapati (UT/Dallas)
• Chi Xu (UT/Dallas)